We explore the possibility of using an AlGaN/GaN high electron mobility transistor (HEMT) as a free-space coupled homodyne mixer. We used 150 GHz radiation from a Free Electron Laser, hence 5 times higher than the HEMT nominal band center at 30 GHz. The homodyne mixing provides a quasidc output signal, which makes the HEMT a detector of the radiation at 150 GHz.
Homodyne mixing at 150 GHz in a high electron mobility transistor
M Ortolani;A Di Gaspare;E Giovine;F Evangelisti;V Foglietti
2008
Abstract
We explore the possibility of using an AlGaN/GaN high electron mobility transistor (HEMT) as a free-space coupled homodyne mixer. We used 150 GHz radiation from a Free Electron Laser, hence 5 times higher than the HEMT nominal band center at 30 GHz. The homodyne mixing provides a quasidc output signal, which makes the HEMT a detector of the radiation at 150 GHz.File in questo prodotto:
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