We demonstrate a rectification mechanism based on quantum tunneling through the narrow Schottky barrier of a sub-micrometric Au/Ti/n-GaAs junction, which is capable of efficient power detection of free-space terahertz radiation beams even without an applied dc bias. Three-dimensional shaping of the junction geometry provides an enhanced zero-bias tunneling probability due to increased electric fields at the junction, resulting in cutoff frequencies up to 0.55 THz, responsivity up to 200 V/W, and noise equivalent power better than 10^-9 W/sqrt(Hz) without applied dc bias.
Three-dimensional Shaping of Sub-micron GaAs Schottky Junctions for Zero-bias Terahertz Rectification
A Di Gaspare;E Giovine;M Ortolani;V Foglietti
2011
Abstract
We demonstrate a rectification mechanism based on quantum tunneling through the narrow Schottky barrier of a sub-micrometric Au/Ti/n-GaAs junction, which is capable of efficient power detection of free-space terahertz radiation beams even without an applied dc bias. Three-dimensional shaping of the junction geometry provides an enhanced zero-bias tunneling probability due to increased electric fields at the junction, resulting in cutoff frequencies up to 0.55 THz, responsivity up to 200 V/W, and noise equivalent power better than 10^-9 W/sqrt(Hz) without applied dc bias.File in questo prodotto:
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