In this paper we discuss some major aspects on the physics of the phase transition from the amorphous to the face-centered-cubic (fcc) polycrystal in Ge2Sb2Te5 at low temperature. We follow the phase transformation by using structural techniques such as TEM, XRD. and electrical resistivity measurements by using the 4-point-probe technique. The results are interpreted in the framework of a quantitative model.

Amorphous-fcc transition in Ge2Sb2Te5

Lombardo S;Privitera S
2010

Abstract

In this paper we discuss some major aspects on the physics of the phase transition from the amorphous to the face-centered-cubic (fcc) polycrystal in Ge2Sb2Te5 at low temperature. We follow the phase transformation by using structural techniques such as TEM, XRD. and electrical resistivity measurements by using the 4-point-probe technique. The results are interpreted in the framework of a quantitative model.
2010
Istituto per la Microelettronica e Microsistemi - IMM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/435735
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