We present a theory for band-tuned metal-insulator transitions based on the Kubo formalism. Such a transition exhibits scaling of the resistivity curves in the regime where T?>1 or ??>1, where ? is the scattering time and ? the chemical potential. At the critical value of the chemical potential, the resistivity diverges as a power law, Rc~1/T. Consequently, on the metallic side there is a regime with negative dR/dT, which is often misinterpreted as insulating. We show that scaling and this "fake insulator"regime are observed in a wide range of experimental systems. In particular, we show that Mooij correlations in high-temperature metals with negative dR/dT can be quantitatively understood with our scaling theory in the presence of T-linear scattering

Universal Scaling near Band-Tuned Metal-Insulator Phase Transitions

Fratini, Simone;Ciuchi, Sergio;
2023

Abstract

We present a theory for band-tuned metal-insulator transitions based on the Kubo formalism. Such a transition exhibits scaling of the resistivity curves in the regime where T?>1 or ??>1, where ? is the scattering time and ? the chemical potential. At the critical value of the chemical potential, the resistivity diverges as a power law, Rc~1/T. Consequently, on the metallic side there is a regime with negative dR/dT, which is often misinterpreted as insulating. We show that scaling and this "fake insulator"regime are observed in a wide range of experimental systems. In particular, we show that Mooij correlations in high-temperature metals with negative dR/dT can be quantitatively understood with our scaling theory in the presence of T-linear scattering
2023
Istituto dei Sistemi Complessi - ISC
Metal insulator boundaries; Metal insulator transition; Semiconductor insulator boundaries
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/451542
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