Chemical Vapor Deposition (CVD) uses one or more gaseous species (precursors) to form on a substrate, solid phase materials through an activated process. While today a large variety of precursors is known and rather complex deposition routes are involved, a user-friendly classification of precursor compounds as well as a viable discussion of their physical and chemical characteristics can be useful to MOCVD practitioners. In this Chapter, an overview of both the exploitation and challenges of MOCVD fabrication of praseodymium oxides will be highlighted from different points of view, including the more suited precursors, the synthesis of thin films and their stability on silicon substrates.
MOCVD growth of rare earth oxides: The case of the praseodymium/oxygen system
Lo Nigro R;Toro RG;
2007
Abstract
Chemical Vapor Deposition (CVD) uses one or more gaseous species (precursors) to form on a substrate, solid phase materials through an activated process. While today a large variety of precursors is known and rather complex deposition routes are involved, a user-friendly classification of precursor compounds as well as a viable discussion of their physical and chemical characteristics can be useful to MOCVD practitioners. In this Chapter, an overview of both the exploitation and challenges of MOCVD fabrication of praseodymium oxides will be highlighted from different points of view, including the more suited precursors, the synthesis of thin films and their stability on silicon substrates.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
