p-type (1 0 0) Cz silicon wafers were contaminated with Cu, W, and Ti in the dose range of 5 x 10(9)-1 x 10(14)cm(-2) by ion implantation. Surface photovoltage measurements were used to detect the metal impurities after annealing. Fast and slow cooling have been used and calibration curves have been obtained in all cases. Higher sensitivity has been determined for slow cooling (Cu and W) or fast cooling (Ti) depending if deep levels are associated with substitutional (Cu and W) or interstitial (Ti) position.
Surface photovoltage measurements for Cu, Ti and W determination in Si wafers
Raineri V
2001
Abstract
p-type (1 0 0) Cz silicon wafers were contaminated with Cu, W, and Ti in the dose range of 5 x 10(9)-1 x 10(14)cm(-2) by ion implantation. Surface photovoltage measurements were used to detect the metal impurities after annealing. Fast and slow cooling have been used and calibration curves have been obtained in all cases. Higher sensitivity has been determined for slow cooling (Cu and W) or fast cooling (Ti) depending if deep levels are associated with substitutional (Cu and W) or interstitial (Ti) position.File in questo prodotto:
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