Development of memories based on organic soft materials is a current industrial niche aimed at the upper contacts flash memories. The electrical bistability of such materials makes them ideal candidates for cost-effective, fast-programming switching devices. Hybrid thin films Of SiO2 with Rose Bengal (bis-triethylammonium) dopant are here reported for the first time, together with their characterisations. Technology-wise the main advantage of the films is the possibility to cast photolithographically, which is also cost-effective. The physical and chemical stability of the films yields reproducible devices, from both the micro technological and electrical point of view.

Bistable hybrids in sol-gel technology for switching devices

Della Corte F;Rendina I;
2007

Abstract

Development of memories based on organic soft materials is a current industrial niche aimed at the upper contacts flash memories. The electrical bistability of such materials makes them ideal candidates for cost-effective, fast-programming switching devices. Hybrid thin films Of SiO2 with Rose Bengal (bis-triethylammonium) dopant are here reported for the first time, together with their characterisations. Technology-wise the main advantage of the films is the possibility to cast photolithographically, which is also cost-effective. The physical and chemical stability of the films yields reproducible devices, from both the micro technological and electrical point of view.
2007
Istituto per la Microelettronica e Microsistemi - IMM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/49656
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