Development of non-volatile memories based on organic soft materials is one of two main trends in industry for flash-memories. The electrical bistability of such materials makes them ideal candidates for cost-effective, fast programming switching devices. SiO2-Rose Bengal (bis-triethylammonium) hybrid thin films are reported here together with their characterizations. The technology yields well reproducible films with good current-voltage switching characteristics. Owing to their physical and chemical stability the films are suited to standard micro-photolitography technology, rendering their fabrication cost-effective.
Switching devices in sol-gel hybrid thin film technology
Casalino M;Rendina I;Della Corte FG
2009
Abstract
Development of non-volatile memories based on organic soft materials is one of two main trends in industry for flash-memories. The electrical bistability of such materials makes them ideal candidates for cost-effective, fast programming switching devices. SiO2-Rose Bengal (bis-triethylammonium) hybrid thin films are reported here together with their characterizations. The technology yields well reproducible films with good current-voltage switching characteristics. Owing to their physical and chemical stability the films are suited to standard micro-photolitography technology, rendering their fabrication cost-effective.File in questo prodotto:
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