The Hall scattering factor r(H) has been determined for holes in high-dose boron-implanted ultrashallow junctions containing high concentrations of boron-interstitial clusters (BICs), combining scanning capacitance microscopy, nanospreading resistance, Hall effect, and secondary ion mass spectroscopy measurements. A value of r(H)=0.74 +/- 0.1 has been found in reference defect-free fully activated junctions, in good agreement with the existing literature. In the case of junctions containing high concentrations of immobile and electrically inactive BICs, and independently of the implant or the annealing process, the r(H) value has been found to be equal to 0.95 +/- 0.1. The increase in the r(H) value is explained in terms of the additional scattering centers associated to the presence of high concentrations of BICs.
Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions
Giannazzo F
2009
Abstract
The Hall scattering factor r(H) has been determined for holes in high-dose boron-implanted ultrashallow junctions containing high concentrations of boron-interstitial clusters (BICs), combining scanning capacitance microscopy, nanospreading resistance, Hall effect, and secondary ion mass spectroscopy measurements. A value of r(H)=0.74 +/- 0.1 has been found in reference defect-free fully activated junctions, in good agreement with the existing literature. In the case of junctions containing high concentrations of immobile and electrically inactive BICs, and independently of the implant or the annealing process, the r(H) value has been found to be equal to 0.95 +/- 0.1. The increase in the r(H) value is explained in terms of the additional scattering centers associated to the presence of high concentrations of BICs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
