In this work we propose an alternative methodology to study B diffusion in crystalline Ge We enhance B diffusion by means of implants in such a way to increase the point-defects distribution through the sample, well above the equilibrium value A comparison between B diffusion Occurring tinder implantation with different ions or after post-implantation annealing allowed to discern any possible role of ionization effects on B diffusion Indeed, B diffusion is demonstrated to Occur through a point-defect-mediated mechanism. The diffusion mechanism is hence discussed These results are a key point for a full comprehension of the B diffusion in Ge.
Radiation enhanced diffusion of B in crystalline Ge
Bruno E;Mirabella S;Impellizzeri G;Napolitani E;
2010
Abstract
In this work we propose an alternative methodology to study B diffusion in crystalline Ge We enhance B diffusion by means of implants in such a way to increase the point-defects distribution through the sample, well above the equilibrium value A comparison between B diffusion Occurring tinder implantation with different ions or after post-implantation annealing allowed to discern any possible role of ionization effects on B diffusion Indeed, B diffusion is demonstrated to Occur through a point-defect-mediated mechanism. The diffusion mechanism is hence discussed These results are a key point for a full comprehension of the B diffusion in Ge.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
