We review the effects of microwave irradiation on low dimensional electron systems in Silicon nano-structures. Depending on the temperature and the energy scales involved, different effects may be observed on the transition probabilities of elastic and inelastic processes. In particular two cases of 0 dimensional confinement are analyzed, i.e., the trapping of a single electron in point defects close to a two dimensional electron system, and in single donor atoms trapped in the channel of a nanoMOSFET Microwave dependent capture and emission phenomena and photon assisted tunneling are described in such kind of systems. Consequences on the single spin resonance detection and on the spin manipulation are discussed.
Microwave Effects in Silicon Low Dimensional Nanostructures
Prati E;Fanciulli M
2010
Abstract
We review the effects of microwave irradiation on low dimensional electron systems in Silicon nano-structures. Depending on the temperature and the energy scales involved, different effects may be observed on the transition probabilities of elastic and inelastic processes. In particular two cases of 0 dimensional confinement are analyzed, i.e., the trapping of a single electron in point defects close to a two dimensional electron system, and in single donor atoms trapped in the channel of a nanoMOSFET Microwave dependent capture and emission phenomena and photon assisted tunneling are described in such kind of systems. Consequences on the single spin resonance detection and on the spin manipulation are discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
