Self-assembled nanowires represent a new interesting technology to be explored in order to increase the cutoff frequency of electronic THz detectors. They can be developed in field effect transistor (FET) and diode geometries exploiting non-linearities of either the transconductance or the current-voltage characteristic as detection mechanism.

Nanowire-based architectures for the detection of THz radiation

Vitiello, Miriam S.;Pitanti, Alessandro;Viti, Leonardo;Ercolani, Daniele;Sorba, Lucia;Tredicucci, Alessandro
2011

Abstract

Self-assembled nanowires represent a new interesting technology to be explored in order to increase the cutoff frequency of electronic THz detectors. They can be developed in field effect transistor (FET) and diode geometries exploiting non-linearities of either the transconductance or the current-voltage characteristic as detection mechanism.
2011
Istituto Nanoscienze - NANO
9781457705083
9781457705090
9781457705106
nanowires, THz, FET
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/512875
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