We report self-assembled InAs/GaAs quantum dots (QDs) monolithically grown on a compliant transferable silicon nanomembrane. The transferable silicon nanomembrane with flat continuous crystalline silicon layer formed via in situ porous silicon sintering is considered a low-cost seed for heteroepitaxy of free-standing single-crystalline foils for photovoltaic cells. In this paper, the compliant feature of transferable silicon nanomembrane has been exploited for direct growth of high-quality InAs/GaAs (QDs) by molecular beam epitaxy. Bright 1.3 µm room temperature photoluminescence from InAs/GaAs QDs has been obtained. The excellent structural and optical qualities of the obtained InAs/GaAs quantum dots offer great opportunities for realizing a low-cost and large-scale integration of III–V-based optoelectronic device on silicon.
MBE growth of InAs/GaAs quantum dots on sintered porous silicon substrates with high optical quality in the 1.3 μm band
Franzo' G.;
2020
Abstract
We report self-assembled InAs/GaAs quantum dots (QDs) monolithically grown on a compliant transferable silicon nanomembrane. The transferable silicon nanomembrane with flat continuous crystalline silicon layer formed via in situ porous silicon sintering is considered a low-cost seed for heteroepitaxy of free-standing single-crystalline foils for photovoltaic cells. In this paper, the compliant feature of transferable silicon nanomembrane has been exploited for direct growth of high-quality InAs/GaAs (QDs) by molecular beam epitaxy. Bright 1.3 µm room temperature photoluminescence from InAs/GaAs QDs has been obtained. The excellent structural and optical qualities of the obtained InAs/GaAs quantum dots offer great opportunities for realizing a low-cost and large-scale integration of III–V-based optoelectronic device on silicon.| File | Dimensione | Formato | |
|---|---|---|---|
|
paper published.pdf
solo utenti autorizzati
Descrizione: articolo pubblicato
Tipologia:
Versione Editoriale (PDF)
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
2 MB
Formato
Adobe PDF
|
2 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
|
Revised_Manuscript_InAs+QDs_1.pdf
accesso aperto
Descrizione: This is a submitted version of the following article: Aouassa, M; Franzò, G; Assaf, E; Sfaxi, L; M'Ghaieth, R; Maaref, H; MBE growth of InAs/GaAs quantum dots on sintered porous silicon substrates with high optical quality in the 1.3 μm band, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Vol. 31, 2020, 4605-4610, published with DOI: 10.1007/s10854-020-03012-7
Tipologia:
Documento in Pre-print
Licenza:
Creative commons
Dimensione
1.17 MB
Formato
Adobe PDF
|
1.17 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
