On the Possibility of Realizing a 2D Structure of Si─N Bonds by Metal-Organic Chemical Vapor Deposition

2D SiN honeycomb monolayer structures predicted theoretically have been the focus of interest in materials science for a long time, most recently for their semiconducting and ferromagnetic properties. Herein, by investigating metal-organic chemical vapor deposition processes and direct heat treatment of epitaxial graphene in ammonia flow, the possibility of realizing a certain periodic 2D structure via Si─N bonds under epitaxial graphene on SiC (0001) is reported. The result is of interest because it is compatible with semiconductor material deposition technologies and future use in nanoscience and nanotechnology.