Silicon Carbide materials and devices: power electronics and innovative applications

This Special Issue entitled “Silicon Carbide materials and devices: power electronics and innovative applications”, published on Materials Science in Semiconductor Processing, is a collection of 35 papers on the latest development of silicon carbide technology related to material growth, electronic devices processing, and new applications. In particular, several important topics are covered in the Special Issue, including bulk and epitaxial growth, device fabrication processing (contacts, implantation, annealing, gate dielectrics including also novel high-k, etc.), defects and advanced characterizations, power devices (Schottky Diodes, MOSFETs, IGBTs, etc.) performances and reliability. Also new applications of SiC in optics, high-frequency electronics and MEMS are covered among the topics of the Special Issue.