Side‐Gate Modulation of Supercurrent in InSb Nanoflag‐Based Josephson Junctions

InSb nanoflags, due to their intrinsic spin–orbit interactions, are an interesting platform in the study of planar Josephson junctions. Ballistic transport, combined with high transparency of the superconductor/semiconductor interfaces, is reported to lead to interesting phenomena such as the Josephson diode effect. The versatility offered by the planar geometry can be exploited to manipulate both carrier concentration and spin–orbit strength by electrical means. Herein, experimental results on InSb nanoflag-based Josephson junctions fabricated with side gates placed in close proximity to the junction are presented. It is shown that side gates can efficiently modulate the current through the junction, both in the dissipative and in dissipation-less regimes, similar to what is obtained with a conventional back gate. Furthermore, the side gates can be used to influence the Fraunhofer interference pattern induced by the presence of an external out-of-plane magnetic field.