The transition from amorphous to crystalline phase in silicon carbide was investigated by infrared spectroscopy and transmission electron microscopy (TEM). Amorphous silicon carbide films on silicon substrate were deposited by plasma enhanced chemical vapour deposition. Quantitative analysis of the crystalline fraction has been performed by IR measurements. The crystallisation kinetic was monitored by following the evolution of the siliconcarbon bond absorption band in the infrared spectra as a function of the annealing temperature (8001000°C) and time. The results indicate that crystallisation occurs through the nucleation and growth of crystalline grains and an activation energy of 5.1eV for the process has been determined.
Crystallization mechanism of amorphous silicon carbide
Roccaforte F;
2002
Abstract
The transition from amorphous to crystalline phase in silicon carbide was investigated by infrared spectroscopy and transmission electron microscopy (TEM). Amorphous silicon carbide films on silicon substrate were deposited by plasma enhanced chemical vapour deposition. Quantitative analysis of the crystalline fraction has been performed by IR measurements. The crystallisation kinetic was monitored by following the evolution of the siliconcarbon bond absorption band in the infrared spectra as a function of the annealing temperature (8001000°C) and time. The results indicate that crystallisation occurs through the nucleation and growth of crystalline grains and an activation energy of 5.1eV for the process has been determined.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
