In this paper we report on recent results obtained from .ash lamp annealing (FLA) for the formation of ultrashallow junctions. Si (100) wafers were implanted at ultra-low energy (500 eV) with boron to a fluuence of 1E15 ions/cm2. FLA was carried out at temperatures of 1100 and 1200 °C with a soak time of 20 ms. For comparison conventional rapid thermal annealing (RTA) was performed at 1100 and 1200 °C. The boron diffusion and the dopant activation were investigated by secondary ion mass spectroscopy (SIMS) and spreading resistance pro.ling (SRP). The activated doses after FLA were as high as 20% of the implanted dose and con.ned in a layer of 60 nm. The sheet resistances were comparable to those after RTA treatment.
Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon
Mannino G;
2002
Abstract
In this paper we report on recent results obtained from .ash lamp annealing (FLA) for the formation of ultrashallow junctions. Si (100) wafers were implanted at ultra-low energy (500 eV) with boron to a fluuence of 1E15 ions/cm2. FLA was carried out at temperatures of 1100 and 1200 °C with a soak time of 20 ms. For comparison conventional rapid thermal annealing (RTA) was performed at 1100 and 1200 °C. The boron diffusion and the dopant activation were investigated by secondary ion mass spectroscopy (SIMS) and spreading resistance pro.ling (SRP). The activated doses after FLA were as high as 20% of the implanted dose and con.ned in a layer of 60 nm. The sheet resistances were comparable to those after RTA treatment.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
