: Electrostriction is the upsurge of strain under an electric field in any dielectric material. Oxygen-defective metal oxides, such as acceptor-doped ceria, exhibit high electrostriction 10-17 m2V-2 values, which can be further enhanced via interface engineering at the nanoscale. This effect in ceria is "non-classical" as it arises from an intricate relation between defect-induced polarisation and local elastic distortion in the lattice. Here, we investigate the impact of mismatch strain when epitaxial Gd-doped CeO2 thin films are grown on various single-crystal substrates. We demonstrate that varying the compressive and tensile strain can fine-tune the electromechanical response. The electrostriction coefficients achieve a large M11 ≈ 3.6·10-15 m2V-2 in lattices of in-plane compressed films, i.e., a positive tetragonality (c/a-1 > 0), with stress above 3 GPa at the film/substrate interface. Chemical and structural analysis suggests that the high electrostriction stems from anisotropic distortions in the local lattice strain, which lead to constructively oriented elastic dipoles and Ce3+ electronic defects.

Enhanced non-classical electrostriction in strained tetragonal ceria

Chaluvadi S. K.;Orgiani P.;
2025

Abstract

: Electrostriction is the upsurge of strain under an electric field in any dielectric material. Oxygen-defective metal oxides, such as acceptor-doped ceria, exhibit high electrostriction 10-17 m2V-2 values, which can be further enhanced via interface engineering at the nanoscale. This effect in ceria is "non-classical" as it arises from an intricate relation between defect-induced polarisation and local elastic distortion in the lattice. Here, we investigate the impact of mismatch strain when epitaxial Gd-doped CeO2 thin films are grown on various single-crystal substrates. We demonstrate that varying the compressive and tensile strain can fine-tune the electromechanical response. The electrostriction coefficients achieve a large M11 ≈ 3.6·10-15 m2V-2 in lattices of in-plane compressed films, i.e., a positive tetragonality (c/a-1 > 0), with stress above 3 GPa at the film/substrate interface. Chemical and structural analysis suggests that the high electrostriction stems from anisotropic distortions in the local lattice strain, which lead to constructively oriented elastic dipoles and Ce3+ electronic defects.
2025
Istituto Officina dei Materiali - IOM -
ceria, thin films, Electrostriction; strain
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/525406
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ente

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? ND
social impact