A rigorous study of the efficiency of internal gettering under different conditions, comparing it to external and p(+) gettering, has shown it to be effective in p(+) substrates with backside polysilicon. This is true when the density of oxygen precipitates is high and their size small. However, internal gettering is not effective for a low density of oxygen precipitates when using either p(+) substrates or polysilicon.

Evaluating the effects of internal gettering in epi Si

Frigeri C;
2003

Abstract

A rigorous study of the efficiency of internal gettering under different conditions, comparing it to external and p(+) gettering, has shown it to be effective in p(+) substrates with backside polysilicon. This is true when the density of oxygen precipitates is high and their size small. However, internal gettering is not effective for a low density of oxygen precipitates when using either p(+) substrates or polysilicon.
2003
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Si
gettering
EBIC
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/52780
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