The temperature dependence of low-frequency noise in Au/n-GaAs Schottky diodes, with InAs quantum dots (QDs) embedded in the GaAs confining layers, is investigated in the temperature range of 77-298 K and at frequencies from 1 Hz to 5 kHz. Diodes prepared on samples with similar structure but without QDs exhibit 1/f behavior. In diodes containing QDs, in addition to the 1/f noise at low frequencies, generation-recombination (g-r) noise at higher frequencies was observed, related to single energy traps in the GaAs layer. Analysis of the experimental data has shown that the g-r noise is related to three traps with activation energies 0.234, 0.09 and 0.075 eV, corresponding to the ground and two excited confined states in the QDs.
Low-frequency noise spectroscopy in Au/n-GaAs Schottky diodes with InAs quantum dots
Frigeri P;Franchi S;Gombia E;Mosca R
2005
Abstract
The temperature dependence of low-frequency noise in Au/n-GaAs Schottky diodes, with InAs quantum dots (QDs) embedded in the GaAs confining layers, is investigated in the temperature range of 77-298 K and at frequencies from 1 Hz to 5 kHz. Diodes prepared on samples with similar structure but without QDs exhibit 1/f behavior. In diodes containing QDs, in addition to the 1/f noise at low frequencies, generation-recombination (g-r) noise at higher frequencies was observed, related to single energy traps in the GaAs layer. Analysis of the experimental data has shown that the g-r noise is related to three traps with activation energies 0.234, 0.09 and 0.075 eV, corresponding to the ground and two excited confined states in the QDs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
