Quasi-periodic Thue-Morse structures up to 128 layers have been fabricated by using porous silicon technology. Their photonic band gap have been experimentally investigated by means of variable angle reflectivity measurements.

Thue-morse quasi-crystals made of porous silicon

Marino A.
;
Rea I.;De Stefano L.;Giocondo M.;
2007

Abstract

Quasi-periodic Thue-Morse structures up to 128 layers have been fabricated by using porous silicon technology. Their photonic band gap have been experimentally investigated by means of variable angle reflectivity measurements.
2007
Istituto di Scienze Applicate e Sistemi Intelligenti "Eduardo Caianiello" - ISASI
Quasi-periodic, porous silicon, photonic band gap, ellipsometry
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/537038
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