Experimental study of a two-stroke relaxation oscillator (TSO) has enabled to show that this electronic component has the same features as the so-called “memristor”. So, we have used the memristor’s direct current (DC) v M −i M characteristic for modeling the TSO’s DC current-voltage characteristic. This led us to confirm on one hand, that the TSO is a memristor and, on the other hand to propose a new four- dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.

Torus breakdown in a two-stroke relaxation memristor

Meucci R.;Euzzor S.;Di Garbo A.
2021

Abstract

Experimental study of a two-stroke relaxation oscillator (TSO) has enabled to show that this electronic component has the same features as the so-called “memristor”. So, we have used the memristor’s direct current (DC) v M −i M characteristic for modeling the TSO’s DC current-voltage characteristic. This led us to confirm on one hand, that the TSO is a memristor and, on the other hand to propose a new four- dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.
2021
Istituto di Biofisica - IBF - Sede Secondaria Pisa
Memristor, Uni-junction transistor, Torus breakdown, Relaxation and chaotic oscillators
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/538354
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