We report the room temperature, low-voltage-enabled modulation of the optical response of hybrid transparent-conductive-oxide/ferroelectric multilayers. We have fabricated an optical multilayer consisting of Al-doped ZnO (AZO) and BaTiO3 films deposited on a Nb-doped SrTiO3(110) substrate. Applying a low voltage between the AZO film and the substrate, a significant variation of the system's optical response has been detected by means of in operando spectroscopic ellipsometry. The voltage-induced variations have been ascribed to a combination of charge accumulation/depletion at the insulator/semiconductor interface and the field-induced Pockels effect in the BaTiO3 layer and successfully reproduced by an optical model including these effects. We have deduced a variation of the refractive index in AZO in the infrared range by more than 0.1 at an applied bias of 0.2 V and by more than 2 at an applied bias of just 3 V at room temperature, which can be strongly appealing for voltage-modulated active optical systems.

Active optical modulation in hybrid transparent-conductive oxide/electro-optic multilayers

D'Addato, Sergio;Torelli, Piero;di Bona, Alessandro;Benedetti, Stefania;Bisio, Francesco
2025

Abstract

We report the room temperature, low-voltage-enabled modulation of the optical response of hybrid transparent-conductive-oxide/ferroelectric multilayers. We have fabricated an optical multilayer consisting of Al-doped ZnO (AZO) and BaTiO3 films deposited on a Nb-doped SrTiO3(110) substrate. Applying a low voltage between the AZO film and the substrate, a significant variation of the system's optical response has been detected by means of in operando spectroscopic ellipsometry. The voltage-induced variations have been ascribed to a combination of charge accumulation/depletion at the insulator/semiconductor interface and the field-induced Pockels effect in the BaTiO3 layer and successfully reproduced by an optical model including these effects. We have deduced a variation of the refractive index in AZO in the infrared range by more than 0.1 at an applied bias of 0.2 V and by more than 2 at an applied bias of just 3 V at room temperature, which can be strongly appealing for voltage-modulated active optical systems.
2025
Istituto Nanoscienze - NANO - Sede Secondaria Modena
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
Istituto Officina dei Materiali - IOM -
field-gating, transparent conducting oxide, electro-optics
File in questo prodotto:
File Dimensione Formato  
Active Modulation_published.pdf

accesso aperto

Tipologia: Versione Editoriale (PDF)
Licenza: Creative commons
Dimensione 1.45 MB
Formato Adobe PDF
1.45 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/541903
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 1
social impact