Low-field anisotropic magnetoresistance (AMR) sensors based on epitaxial La1−xSrxMnO3 (LSMO) thin films combine ultra-low noise, good interplay between sensitivity and detectivity, and straightforward fabrication, offering a compelling alternative to giant and tunnel magnetoresistance technologies. Here, by tuning Sr doping (x = 0.15–0.45) of LSMO films grown epitaxially on 4° miscut (001)-oriented SrTiO3 substrates, we achieve fine control of performance parameters tailored to match biomedical environments operating at tightly regulated temperatures. We resort to shape-induced uniaxial magnetic anisotropy and Wheatstone bridge structures to suppress noise and isolate the AMR signal. Temperature-dependent characterization reveals that devices with x = 0.35 deliver optimal sensitivity and lowest electronic noise at 310 K (human body temperature), highlighting their strong potential for biomedical sensing applications.

Low-noise anisotropic magnetoresistance sensing at human body temperature: unveiling the optimal doping in La1−xSrxMnO3 films

Chaluvadi S. K.;Polewczyk V.;Petrov A.;Vinai G.;Orgiani P.;
2025

Abstract

Low-field anisotropic magnetoresistance (AMR) sensors based on epitaxial La1−xSrxMnO3 (LSMO) thin films combine ultra-low noise, good interplay between sensitivity and detectivity, and straightforward fabrication, offering a compelling alternative to giant and tunnel magnetoresistance technologies. Here, by tuning Sr doping (x = 0.15–0.45) of LSMO films grown epitaxially on 4° miscut (001)-oriented SrTiO3 substrates, we achieve fine control of performance parameters tailored to match biomedical environments operating at tightly regulated temperatures. We resort to shape-induced uniaxial magnetic anisotropy and Wheatstone bridge structures to suppress noise and isolate the AMR signal. Temperature-dependent characterization reveals that devices with x = 0.35 deliver optimal sensitivity and lowest electronic noise at 310 K (human body temperature), highlighting their strong potential for biomedical sensing applications.
2025
Istituto Officina dei Materiali - IOM -
anisotropic magnetoresistance
doping
electronic noise
manganites
spin–orbit coupling
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Descrizione: This is the version of the article before peer review or editing, as submitted by an author to Journal of Physics D: Applied Physics.  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at 10.1088/1361-6463/ae18de
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/579564
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