In this paper we discuss the laser annealing crystallization of hydrogenated a-Si film deposited at 250 degrees C by means of PECVD technique. Abrupt out-diffusion of hydrogen damages the deposited layers during single shot high energy density laser annealing. On the contrary, a multisteps laser annealing approach, from low to high energy density, allows us to achieve good poly-Si film,, without any H-related defect.
Laser annealing of a-Si for realization of polycrystalline Si film on plastic substrate
Scalese S;Privitera V
2007
Abstract
In this paper we discuss the laser annealing crystallization of hydrogenated a-Si film deposited at 250 degrees C by means of PECVD technique. Abrupt out-diffusion of hydrogen damages the deposited layers during single shot high energy density laser annealing. On the contrary, a multisteps laser annealing approach, from low to high energy density, allows us to achieve good poly-Si film,, without any H-related defect.File in questo prodotto:
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