The Isothermal Test is a promising wafer-level tool to characterize electromigration also in Cu-damascene metallizations, when a correct temperature determination is employed. In this work an improved feedback algorithm is proposed to reduce the observed resistance instability in the stress phase, when the copper structures are approaching the failure.

Resistance Instability in Cu-damascene Structures during the Isothermal Electromigration Test

Impronta M;Scorzoni A
2005

Abstract

The Isothermal Test is a promising wafer-level tool to characterize electromigration also in Cu-damascene metallizations, when a correct temperature determination is employed. In this work an improved feedback algorithm is proposed to reduce the observed resistance instability in the stress phase, when the copper structures are approaching the failure.
2005
Istituto per la Microelettronica e Microsistemi - IMM
0-7803-8992-1
ISOT
wafer level
electromigration
reliability
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/69312
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