We report the results on n/p heterojunction solar cells fabricated on textured CZ silicon. Both amorphous and microcrystalline emitters were fabricated using 13.56 MHz plasma enhanced chemical vapour deposition, and a maximum fabrication temperature of 250°C. All devices include an intrinsic buffer layer and a conductive antireflecting coating. An increase of efficiency from 10.5% to 11.8% was observed with respect to devices fabricated on flat substrates. The maximum short circuit current, 34.4 mA/cm2, was observed in the case of a microcrystalline emitter. The results are discussed, and some indications for further improvements are given.
Heterojunction Solar Cells on Textured Silicon
Summonte C;R Rizzoli;E Centurioni;A Desalvo;
2002
Abstract
We report the results on n/p heterojunction solar cells fabricated on textured CZ silicon. Both amorphous and microcrystalline emitters were fabricated using 13.56 MHz plasma enhanced chemical vapour deposition, and a maximum fabrication temperature of 250°C. All devices include an intrinsic buffer layer and a conductive antireflecting coating. An increase of efficiency from 10.5% to 11.8% was observed with respect to devices fabricated on flat substrates. The maximum short circuit current, 34.4 mA/cm2, was observed in the case of a microcrystalline emitter. The results are discussed, and some indications for further improvements are given.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
