The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose an equivalent circuit model which accounts for most of the physical contributions present in the structure.
Reliability of RF MEMS Switches due to Charging Effects and their Circuital Modelling
Marcelli R;Bartolucci G;Lucibello A;Proietti E;
2009
Abstract
The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose an equivalent circuit model which accounts for most of the physical contributions present in the structure.File in questo prodotto:
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