We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cells for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed.
Localized charge storage in nanocrystal memories: feasibility of a multi-bit cell
Corso D;Crupi I;Lombardo S;
2003
Abstract
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cells for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.