Co3O4 thin films were grown on MgO(100) and MgAl2O4(100) by plasma enhanced-chemical vapor deposition (PE-CVD) from the [Co(dpm)2] precursor. Depositions on both single crystal substrates were performed from Ar/O2 plasmas at temperatures between 100 and 400 C in order to tailor the chemical and physical properties of the synthesized films. The composition, morphology and structure of the Co3O4 systems were thoroughly analyzed by XPS, SIMS, FESEM and bidimensional XRD. The obtained results evidenced the formation of high-purity and strongly oriented Co3O4 thin films, with features dependent on the used substrate and the adopted growth temperature.

Strongly oriented Co3O4 thin films on MgO(100) and MgAl2O4(100) substrates by PE-CVD

BARRECA, DAVIDE
2011

Abstract

Co3O4 thin films were grown on MgO(100) and MgAl2O4(100) by plasma enhanced-chemical vapor deposition (PE-CVD) from the [Co(dpm)2] precursor. Depositions on both single crystal substrates were performed from Ar/O2 plasmas at temperatures between 100 and 400 C in order to tailor the chemical and physical properties of the synthesized films. The composition, morphology and structure of the Co3O4 systems were thoroughly analyzed by XPS, SIMS, FESEM and bidimensional XRD. The obtained results evidenced the formation of high-purity and strongly oriented Co3O4 thin films, with features dependent on the used substrate and the adopted growth temperature.
2011
Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia - ICMATE
Istituto di Scienze e Tecnologie Molecolari - ISTM - Sede Milano
Inglese
13
11
3670
3673
4
http://pubs.rsc.org/en/Content/ArticleLanding/2011/CE/c1ce05280b#!divAbstract
Sì, ma tipo non specificato
CHEMICAL-VAPOR-DEPOSITION
COBALT OXIDE-FILMS
ATOMIC LAYER DEPOSITION
EPITAXIAL-GROWTH
1
info:eu-repo/semantics/article
262
Barreca, Davide
01 Contributo su Rivista::01.01 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/75642
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