We report on the fabrication and electronic transport characterisation of Schottky-gated strongly confined Si/SiGe quantum point contacts (QPC). At zero magnetic field and T=450mK the QPC conductance as a function of gate voltage shows a quantization in units of e(2)/h, indicative of transport through 1D modes which appear to lack both spin and valley degeneracy.
Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts
E Giovine;A Notargiacomo;R Leoni;F Evangelisti
2007
Abstract
We report on the fabrication and electronic transport characterisation of Schottky-gated strongly confined Si/SiGe quantum point contacts (QPC). At zero magnetic field and T=450mK the QPC conductance as a function of gate voltage shows a quantization in units of e(2)/h, indicative of transport through 1D modes which appear to lack both spin and valley degeneracy.File in questo prodotto:
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