We present the fabrication and test of arrays of GaAs Schottky diodes with sub-micrometric junction area and negligible parasitic capacitances working as rectifying detectors at sub-THz frequencies. GaAs Micromachining techniques are used to decrease the cross talking between adjacent diode detectors.

Micromachined Arrays of Air-bridge GaAs Schottky Diodes for THz Cameras

E Giovine;V Foglietti
2010

Abstract

We present the fabrication and test of arrays of GaAs Schottky diodes with sub-micrometric junction area and negligible parasitic capacitances working as rectifying detectors at sub-THz frequencies. GaAs Micromachining techniques are used to decrease the cross talking between adjacent diode detectors.
2010
Istituto di fotonica e nanotecnologie - IFN
Inglese
IEEE Proc. of the 35th international conference on infrared millimetre and terahertz waves IRMMW-THz 2010
7
none
Casini, R; Dominijanni, D; Giovine, E; Ortolani, M; Gatta, F; D'Amico, A; Foglietti, V
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/80136
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