We investigated vertically aligned InAs/GaAs QD structures, grown by atomic layer molecular beam epitaxy, with a number N of layers and with spacer thicknesses d. QD alignment and structure quality were checked by transmission electron microscopy. The dependencies of carrier capture, decay dynamics and existence of quenching channels on the design parameters N and d were studied by lime resolved photoluminescence (PL), PL excitation (PLE) and PL temperature-dependent measurements. Our results show that the carrier capture and the radiative efficiency of the QDs are negatively affected by increasing the number of QD layers and by reducing the spacer thicknesses; this effect is likely to be related to the increase of defect concentrations in GaAs spacers, due to relaxation of an increasingly large strain.
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures
P Frigeri;S Franchi;L Lazzarini;G Salviati
2000
Abstract
We investigated vertically aligned InAs/GaAs QD structures, grown by atomic layer molecular beam epitaxy, with a number N of layers and with spacer thicknesses d. QD alignment and structure quality were checked by transmission electron microscopy. The dependencies of carrier capture, decay dynamics and existence of quenching channels on the design parameters N and d were studied by lime resolved photoluminescence (PL), PL excitation (PLE) and PL temperature-dependent measurements. Our results show that the carrier capture and the radiative efficiency of the QDs are negatively affected by increasing the number of QD layers and by reducing the spacer thicknesses; this effect is likely to be related to the increase of defect concentrations in GaAs spacers, due to relaxation of an increasingly large strain.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
