n this work, we report on the structural analyses of undoped CdTe samples grown by the vapor phase and the Bridgman methods. Different techniques were used for determining the structural defects: wet etching, high resolution X-ray diffraction, double crystal X-ray topography and monochromatic SEM-cathodoluminescence mapping. The density and the nature of the structural defects were found to be cor-related to the stoichiometry of the samples, as determined by a detailed analysis of the temperature de-pendence of the partial pressure of the vapors in equilibrium with the solid

Stoichiometry related defects in CdTe crystals

Bissoli F;Armani N;Salviati G;Ferrari C;Zha M;Zappettini A;Zanotti L
2004

Abstract

n this work, we report on the structural analyses of undoped CdTe samples grown by the vapor phase and the Bridgman methods. Different techniques were used for determining the structural defects: wet etching, high resolution X-ray diffraction, double crystal X-ray topography and monochromatic SEM-cathodoluminescence mapping. The density and the nature of the structural defects were found to be cor-related to the stoichiometry of the samples, as determined by a detailed analysis of the temperature de-pendence of the partial pressure of the vapors in equilibrium with the solid
2004
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
CdTe
wet etching
structural defects
cathodoluminescence
X-ray topography
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/84308
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