CdS thin films have been deposited on InP and glass substrates using the chemical bath deposition technique. Baths containing CdSO4, thiourea, and NH3 were used. The temperature of the deposition process was 65 degrees C and the duration of deposition varied between 20 and 160 minutes. The properties of the CdS/InP heterojuntion were investigated by TEM, EDS and X-ray diffraction. TEM pictures, EDS and X-ray rocking curves indicate the formation of a beta-In2S3 transition layer at the InP-CdS interface, wich may reduce the lattice mismatch between InP and CdS.
Investigation of CdS/InP heterojunction prepared by chemical bath deposition
Frigeri C;Besagni T
2007
Abstract
CdS thin films have been deposited on InP and glass substrates using the chemical bath deposition technique. Baths containing CdSO4, thiourea, and NH3 were used. The temperature of the deposition process was 65 degrees C and the duration of deposition varied between 20 and 160 minutes. The properties of the CdS/InP heterojuntion were investigated by TEM, EDS and X-ray diffraction. TEM pictures, EDS and X-ray rocking curves indicate the formation of a beta-In2S3 transition layer at the InP-CdS interface, wich may reduce the lattice mismatch between InP and CdS.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
