The growth of InGaPN epitaxial layers on silicon substrates by metal-organic vapour phase epitaxy using dimethylhydrazine, trimethylgallium, trimethylindium and phosphine precursors is reported. In order to reduce interface problems connected with hetero-bonds and antiphase domain formation, a very thin buffer layer of GaP has been grown on the hydrophobic silicon surface. The layers are prepared at temperature of 630°C and have been characterized by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and Raman scattering. The growth occurs through 3 dimensional processes. Mean surface roughness as high as 20-30 nm is observed and phase separation is evidenced
GaInPN/Si HETEROSTRUCTURE GROWTH BY METAL-ORGANIC VAPOUR PHASE EPITAXY
Attolini G;Bosi M;
2009
Abstract
The growth of InGaPN epitaxial layers on silicon substrates by metal-organic vapour phase epitaxy using dimethylhydrazine, trimethylgallium, trimethylindium and phosphine precursors is reported. In order to reduce interface problems connected with hetero-bonds and antiphase domain formation, a very thin buffer layer of GaP has been grown on the hydrophobic silicon surface. The layers are prepared at temperature of 630°C and have been characterized by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and Raman scattering. The growth occurs through 3 dimensional processes. Mean surface roughness as high as 20-30 nm is observed and phase separation is evidencedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
