High electron mobility transistors can work as room-temperature direct detectors of radiation at frequency much higher than their cutoff frequency. One open issue is how the radiation couples to the sub-wavelength transistor channel. Here, we studied the coupling of radiation to an AlGaN/GaN transistor with cut-off frequency of 30 GEL Local irradiation with a Free Electron Laser source at 0.15 THz allowed us to selectively couple the signal to the channel through one transistor terminal at a time. Far-field experiments at 0.15 - 0.94 THz were also performed in order to study the nonlinear properties of the transistor channel.
Detection of terahertz radiation by AlGaN/GaN field-effect transistors
Ortolani M;Di Gaspare A;Giovine E;Evangelisti F;Foglietti V;
2009
Abstract
High electron mobility transistors can work as room-temperature direct detectors of radiation at frequency much higher than their cutoff frequency. One open issue is how the radiation couples to the sub-wavelength transistor channel. Here, we studied the coupling of radiation to an AlGaN/GaN transistor with cut-off frequency of 30 GEL Local irradiation with a Free Electron Laser source at 0.15 THz allowed us to selectively couple the signal to the channel through one transistor terminal at a time. Far-field experiments at 0.15 - 0.94 THz were also performed in order to study the nonlinear properties of the transistor channel.File in questo prodotto:
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