Low-cost VLSI-compatible resonant-cavity-enhanced p-i-n in mc-Si operating at the VCSEL wavelengths around 850 nm

Low original design of Resonant-Cavity-Enhanced photodetectors at 850 nm, realized in microcrystalline silicon by simpe and low-cost thin film deposition processes compatible with standard VLSI technologies is presented. The configuration allows high quantum efficiencies in thin active region. This increases the bandwidth reducign the carrier transit time in teh device. The wavelength selective behavior is a further characterization of high-quality distributed bragg reflectors, necessary to the microcavity definition and optimization, and of the active p-i-n structure are also reported.