CNR Institutional Research Information System

Sfoglia per Serie  MATERIALS SCIENCE FORUM

Opzioni
Vai a: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Mostrati risultati da 1 a 20 di 106
Titolo Data di pubblicazione Autore(i) File
1300°c annealing of 1×10<sup>20</sup> al<sup>+</sup> ion implanted 3C-SiC 1-gen-2019 Nipoti, Roberta; Canino, Mariaconcetta; Bonafè, Filippo; Torregrosa, Frank; Monnoye, Sylvain; Mank, Hugues; Zielinski, Marcin
1950°C annealing of Al<sup>+</sup> implanted 4H-SiC: Sheet resistance dependence on the annealing time 1-gen-2016 Nipoti, Roberta; Parisini, Antonella; Vantaggio, Salvatore; Alfieri, Giovanni; Carnera, Alberto; Centurioni, Emanuele; Elmi, Ivan; Grossner, Ulrike
2D simulation of under-mask penetration in 4H-SiC implanted with Al(+) ions 1-gen-2011 Lulli, Giorgio; Lulli, Giorgio; Nipoti, Roberta; Nipoti, Roberta
3 × 10<sup>18</sup> - 1 × 10<sup>19</sup> cm<sup>-3</sup> al<sup>+</sup> ion implanted 4h-sic: Annealing time effect 1-gen-2020 Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Canino, Mariaconcetta; Sanmartin, Michele; Alfieri, Giovanni
3C-SiC heteroepitaxial growth on Inverted Silicon Pyramids (ISP) 1-gen-2010 D'Arrigo G.; Severino A.; Milazzo G.; Bongiorno C.; Piluso N.; Abbondanza G.; Mauceri M.; Condorelli G.; La Via F.
About the electrical activation of 1×10<sup>20</sup> cm<sup>-3</sup> ion implanted al in 4H-SiC at annealing temperatures in the range 1500 - 1950°C 1-gen-2018 Nipoti, Roberta; Carnera, Alberto; Alfieri, Giovanni; Kranz, Lukas
About the hole transport analysis in heavy doped p-type 4H-SiC(Al) 1-gen-2015 Parisini, A.; Nipoti, R.
Activation energy for the post implantation annealing of 10<sup>19</sup>cm<sup>-3</sup> and 10<sup>20</sup> cm<sup>-3</sup> ion implanted al in 4H SiC. 1-gen-2019 Nipoti, Roberta; Canino, Mariaconcetta; Sapienza, Sergio; Bellettato, Michele; Sozzi, Giovanna; Alfieri, Giovanni
Ag growth on 3C-SiC(001) c(2x2) C-terminated and c(4x2) Si-terminated surfaces 1-gen-2002 N. Rodriguez; M. D'Angelo; V Y Aristov; P. Soukiassian; A. Lescuras; C. Croti; M. Pedio; P. Perfetti
Al+ implanted 4H-SiC p(+)-i-n diodes: Evidence for post-implantation-annealing dependent defect activation 1-gen-2014 Grossner, U; Moscatelli, F; Nipoti, R
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 1-gen-2013 R. Nipoti; A. Hallén; A. Parisini; F. Moscatelli; S. Vantaggio;
Al<sup>+</sup> ion implanted 4H-SiC vertical p<sup>+</sup>-i-n diodes: Processing dependence of leakage currents and OCVD carrier lifetimes 1-gen-2017 Nipoti, R.; Puzzanghera, M.; Sozzi, G.
Al<sup>+</sup> ion implanted on-axis &lt;0001&gt;semi-insulating 4H-SiC 1-gen-2015 Nipoti, Roberta; Parisini, Antonella; Carnera, Alberto; Albonetti, Cristiano; Vantaggio, Salvatore; Grossner, Ulrike
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process 1-gen-2007 Canino, M; Giannazzo, F; Roccaforte, F; Poggi, A; Solmi, S; Raineri, V; Nipoti, R
Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 1-gen-2009 Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, ; B, G
Analytical prediction of the cross-over point in the temperature coefficient of the forward characteristics of 4H-SiC p<sup>+</sup>-i-n diodes 1-gen-2015 Di Benedetto, L.; Licciardo, G. D.; Bellone, S.; Nipoti, R.
Ar annealing at 1600 degrees C and 1650 degrees C of Al+ implanted p(+)/n 4H-SiC diodes: Analysis of the J-V characteristics versus annealing temperature 1-gen-2005 Bergamini F.; Moscatelli F.; Canino M.; Poggi A.; Nipoti R.
Band offset engineering of II-VI/III-V heterointerfaces 1-gen-1995 Franciosi, A; Vanzetti, L; Sorba, L; Bonanni, A; Cingolani, R; Lomascolo, M; Greco, ; D,
Buffer layer optimization for the growth of state of the art 3C-SiC/Si 1-gen-2015 Bosi, Matteo; Attolini, Giovanni; Negri, Marco; Frigeri, Cesare; Buffagni, Elisa; Ferrari, Claudio; Rimoldi, Tiziano; Cristofolini, Luigi; Aversa, Lucrezia; Tatti, Roberta; Verucchi, Roberto
Carbon nanotubes grown by catalytic CVD on silicon based substrates for electronics applications 1-gen-2007 Rizzoli, R.; Angelucci, R.; Guerri, S.; Parisini, A.; Veronese, G. P.; Vinciguerra, V.; Bevilacqua, M. F.
Mostrati risultati da 1 a 20 di 106
Legenda icone

  •  file ad accesso aperto
  •  file disponibili sulla rete interna
  •  file disponibili agli utenti autorizzati
  •  file disponibili solo agli amministratori
  •  file sotto embargo
  •  nessun file disponibile