The activation energy for the electrical activation of 1×10 cm and of 1×10 cm ion implanted Al in 4H-SiC has been estimated. Ion implantation temperature and dose rate were in the range 430-500°C and around 10 cms, respectively. Post implantation annealing temperatures varied between 1500 °C and 1950 °C. The annealing time per each annealing temperature was sufficiently long that the sheet resistance of the implanted layer could be equal to the stationary value at the applied annealing temperature. The Arrhenius plots of the room temperature sheet resistance with respect to the post implantation annealing temperature featured an exponential trend for both implanted Al concentrations. The correspondent activation energies are the energy required to place an implanted Al atom in a substitutional lattice site, i.e. the electrical activation energy. Activation energies around 1 eV, equal within errors for the two implanted Al concentrations, were found.
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC.
Nipoti Roberta;Canino Mariaconcetta;Sapienza Sergio;Bellettato Michele;
2019
Abstract
The activation energy for the electrical activation of 1×10 cm and of 1×10 cm ion implanted Al in 4H-SiC has been estimated. Ion implantation temperature and dose rate were in the range 430-500°C and around 10 cms, respectively. Post implantation annealing temperatures varied between 1500 °C and 1950 °C. The annealing time per each annealing temperature was sufficiently long that the sheet resistance of the implanted layer could be equal to the stationary value at the applied annealing temperature. The Arrhenius plots of the room temperature sheet resistance with respect to the post implantation annealing temperature featured an exponential trend for both implanted Al concentrations. The correspondent activation energies are the energy required to place an implanted Al atom in a substitutional lattice site, i.e. the electrical activation energy. Activation energies around 1 eV, equal within errors for the two implanted Al concentrations, were found.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
