ANZALONE, RUGGERO CARMELO
ANZALONE, RUGGERO CARMELO
3C-SiC film growth on Si substrates
2011 Severino A; Locke C; Anzalone R; Camarda M; Piluso; N La Magna A; Saddow; S E; Abbondanza G; D'Arrigo G; La Via; F
A new position sensitive anode for plasmas diagnostic
2013 Grasso, R; Tudisco, S; Anzalone, A; Musumeci, F; Scordino, A; Spitaleri, A; Anzalone, R; D'Arrigo, G; La Via, F
Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C-SiC for MEMS Application
2011 Anzalone R; D'Arrigo G; Camarda M; Locke C; Saddow S E; La Via F
Advanced residual stress analysis on the heteroepitaxial growth of 3C-SiC/Si for MEMS application
2011 Anzalone, R; Camarda, M; D'Arrigo, G; Piluso, N; Severino, A; Canino, A; La Magna, A; Via, La; F,
Advanced stress analysis by micro-structures realization on high quality hetero-epitaxial 3C-SiC for MEMS application
2011 Anzalone, R; Camarda, M; D'Arrigo, G; Locke, C; Canino, A; Piluso, N; Severino, A; La Magna, A; Saddow, ; S, E; Via, La; F,
Analysis on 3C-SiC layer grown on pseudomorphic-Si/Si1-xGex/Si(001) heterostructures
2015 Piluso, N; Camarda, M; Anzalone, R; Severino, A; Scalese, S; La Via, F
Complete determination of the local stress field in epitaxial thin films using single microstructure
2011 Camarda, Massimo; Anzalone, RUGGERO CARMELO; Severino, Andrea; Piluso, Nicolo'; LA MAGNA, Antonino; LA VIA, Francesco
Correlation between macroscopic and microscopic stress fields: Application to the 3C-SiC/Si heteroepitaxy
2013 Camarda M;Anzalone R;Severino A;Piluso N;Canino A;La Via F;La Magna; A
Curvature evaluation of Si/3C-SiC/Si hetero-structure grown by Chemical Vapor Deposition
2014 Anzalone, R; Camarda, M; Severino, A; Piluso, N; La Via, F
Defect Influence on Heteroepitaxial 3C-SiC Young's Modulus
2011 Anzalone, R.; Camarda, M.; Canino, A.; Piluso, N.; La Via, F.; D'Arrigo, G.
Defect Influence on Heteroepitaxial 3C-SiC Young's Modulus
2011 Anzalone R; Camarda M; Canino A; Piluso N; La Via F; D'Arrigo G
Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111)Si
2009 Severino A; Camarda M; Condorelli G; Perdicaro LMS; Anzalone R; Mauceri M; La Magna A; La Via F
Evaluation of 3C-SiC/Si residual stress and curvatures along different wafer direction
2014 Anzalone, R.; Alberti, A.; La Via, F.
Evaluation of mechanical and optical properties of hetero-epitaxial single crystal 3C-SiC squared-membrane
2014 Anzalone, R; D'Arrigo, G; Camarda, M; Piluso, N; Via, Fl
Extended characterization of the stress fields in the heteroepitaxial growth of 3C-SiC on silicon for sensors and device applications
2012 Camarda, M; Anzalone, R; Piluso, N; Severino, A; Canino, A; La Via, F; Magna, La; A,
Fracture property and quantitative strain evaluation of hetero-epitaxial single crystal 3C-SiC membrane
2014 Anzalone R.; D'Arrigo G.; Camarda M.; Piluso N.; La Via F.
Growth rate effect on 3C-SiC film residual stress on (100) Si substrates
2010 Anzalone, R; Locke, C; Carballo, J; Piluso, N; Severino, A; D'Arrigo, G; Volinsky, Aa; La Via, F; Saddow, Se
Hetero-epitaxial single crystal 3C-SiC opto-mechanical pressure sensor
2015 Roncaglia, Alberto; Anzalone, RUGGERO CARMELO; Belsito, Luca; Mancarella, Fulvio; Camarda, Massimo; Piluso, Nicolò; Nipoti, Roberta; LA VIA, Francesco
Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins
2008 Anzalone R; Bongiorno C; Severino A; D'Arrigo G; Abbondanza G; Foti G; La Via F
Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates
2009 Anzalone R; Severino A; D'Arrigo G; Bongiorno C; Abbondanza G; Foti G; Saddow S; La Via F
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
3C-SiC film growth on Si substrates | 1-gen-2011 | Severino A; Locke C; Anzalone R; Camarda M; Piluso; N La Magna A; Saddow; S E; Abbondanza G; D'Arrigo G; La Via; F | |
A new position sensitive anode for plasmas diagnostic | 1-gen-2013 | Grasso, R; Tudisco, S; Anzalone, A; Musumeci, F; Scordino, A; Spitaleri, A; Anzalone, R; D'Arrigo, G; La Via, F | |
Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C-SiC for MEMS Application | 1-gen-2011 | Anzalone R; D'Arrigo G; Camarda M; Locke C; Saddow S E; La Via F | |
Advanced residual stress analysis on the heteroepitaxial growth of 3C-SiC/Si for MEMS application | 1-gen-2011 | Anzalone, R; Camarda, M; D'Arrigo, G; Piluso, N; Severino, A; Canino, A; La Magna, A; Via, La; F, | |
Advanced stress analysis by micro-structures realization on high quality hetero-epitaxial 3C-SiC for MEMS application | 1-gen-2011 | Anzalone, R; Camarda, M; D'Arrigo, G; Locke, C; Canino, A; Piluso, N; Severino, A; La Magna, A; Saddow, ; S, E; Via, La; F, | |
Analysis on 3C-SiC layer grown on pseudomorphic-Si/Si1-xGex/Si(001) heterostructures | 1-gen-2015 | Piluso, N; Camarda, M; Anzalone, R; Severino, A; Scalese, S; La Via, F | |
Complete determination of the local stress field in epitaxial thin films using single microstructure | 1-gen-2011 | Camarda, Massimo; Anzalone, RUGGERO CARMELO; Severino, Andrea; Piluso, Nicolo'; LA MAGNA, Antonino; LA VIA, Francesco | |
Correlation between macroscopic and microscopic stress fields: Application to the 3C-SiC/Si heteroepitaxy | 1-gen-2013 | Camarda M;Anzalone R;Severino A;Piluso N;Canino A;La Via F;La Magna; A | |
Curvature evaluation of Si/3C-SiC/Si hetero-structure grown by Chemical Vapor Deposition | 1-gen-2014 | Anzalone, R; Camarda, M; Severino, A; Piluso, N; La Via, F | |
Defect Influence on Heteroepitaxial 3C-SiC Young's Modulus | 1-gen-2011 | Anzalone, R.; Camarda, M.; Canino, A.; Piluso, N.; La Via, F.; D'Arrigo, G. | |
Defect Influence on Heteroepitaxial 3C-SiC Young's Modulus | 1-gen-2011 | Anzalone R; Camarda M; Canino A; Piluso N; La Via F; D'Arrigo G | |
Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111)Si | 1-gen-2009 | Severino A; Camarda M; Condorelli G; Perdicaro LMS; Anzalone R; Mauceri M; La Magna A; La Via F | |
Evaluation of 3C-SiC/Si residual stress and curvatures along different wafer direction | 1-gen-2014 | Anzalone, R.; Alberti, A.; La Via, F. | |
Evaluation of mechanical and optical properties of hetero-epitaxial single crystal 3C-SiC squared-membrane | 1-gen-2014 | Anzalone, R; D'Arrigo, G; Camarda, M; Piluso, N; Via, Fl | |
Extended characterization of the stress fields in the heteroepitaxial growth of 3C-SiC on silicon for sensors and device applications | 1-gen-2012 | Camarda, M; Anzalone, R; Piluso, N; Severino, A; Canino, A; La Via, F; Magna, La; A, | |
Fracture property and quantitative strain evaluation of hetero-epitaxial single crystal 3C-SiC membrane | 1-gen-2014 | Anzalone R.; D'Arrigo G.; Camarda M.; Piluso N.; La Via F. | |
Growth rate effect on 3C-SiC film residual stress on (100) Si substrates | 1-gen-2010 | Anzalone, R; Locke, C; Carballo, J; Piluso, N; Severino, A; D'Arrigo, G; Volinsky, Aa; La Via, F; Saddow, Se | |
Hetero-epitaxial single crystal 3C-SiC opto-mechanical pressure sensor | 1-gen-2015 | Roncaglia, Alberto; Anzalone, RUGGERO CARMELO; Belsito, Luca; Mancarella, Fulvio; Camarda, Massimo; Piluso, Nicolò; Nipoti, Roberta; LA VIA, Francesco | |
Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins | 1-gen-2008 | Anzalone R; Bongiorno C; Severino A; D'Arrigo G; Abbondanza G; Foti G; La Via F | |
Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates | 1-gen-2009 | Anzalone R; Severino A; D'Arrigo G; Bongiorno C; Abbondanza G; Foti G; Saddow S; La Via F |