ANZALONE, RUGGERO CARMELO

ANZALONE, RUGGERO CARMELO  

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Risultati 1 - 20 di 43 (tempo di esecuzione: 0.006 secondi).
Titolo Data di pubblicazione Autore(i) File
Voids-free 3C-SiC/Si interface for high quality epitaxial layer 1-gen-2016 Anzalone, R; Piluso, N; Reitano, R; Alberti, A; Fiorenza, P; Salanitri, M; Severino, A; Lorenti, S; Arena, G; Coffa, S; La Via, F
Analysis on 3C-SiC layer grown on pseudomorphic-Si/Si1-xGex/Si(001) heterostructures 1-gen-2015 Piluso, N; Camarda, M; Anzalone, R; Severino, A; Scalese, S; La Via, F
Strain evaluation and fracture properties of hetero-epitaxial single crystal 3C-SiC squared membrane 1-gen-2015 Anzalone, R; Arrigo, Gd; Camarda, M; Piluso, N; La Via, F
STUDY OF THE ROLE OF PARTICLE-PARTICLE DIPOLE INTERACTION IN DIELECTROPHORETIC DEVICES FOR BIOMARKERS IDENTIFICATION 1-gen-2015 Camarda, Massimo; Baldo, S.; Fisicaro, G.; Anzalone, R.; Scalese, S.; Alberti, A.; La Via, F.; La Magna, A.; Ballo, A.; Giustolisi, G.; Minafra, L.; Cammarata, F. P.; Bravata, V.; Forte, G. I.; Russo, G.; Gilardi, M. C.
Curvature evaluation of Si/3C-SiC/Si hetero-structure grown by Chemical Vapor Deposition 1-gen-2014 Anzalone, R; Camarda, M; Severino, A; Piluso, N; La Via, F
Evaluation of 3C-SiC/Si residual stress and curvatures along different wafer direction 1-gen-2014 Anzalone, R.; Alberti, A.; La Via, F.
Evaluation of mechanical and optical properties of hetero-epitaxial single crystal 3C-SiC squared-membrane 1-gen-2014 Anzalone, R; D'Arrigo, G; Camarda, M; Piluso, N; Via, Fl
Fracture property and quantitative strain evaluation of hetero-epitaxial single crystal 3C-SiC membrane 1-gen-2014 Anzalone R.; D'Arrigo G.; Camarda M.; Piluso N.; La Via F.
Micro-Raman characterization of 4H-SiC stacking faults 1-gen-2014 Piluso, N; Camarda, M; Anzalone, R; La Via, F
Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates 1-gen-2014 Von Kanel H.; Isa F.; Falub C.V.; Barthazy E.J.; Muller E.; Chrastina D.; Isella G.; Kreiliger T.; Taboada A.G.; Meduna M.; Kaufmann R.; Neels A.; Dommann A.; Niedermann P.; Mancarella F.; Mauceri M.; Puglisi M.; Crippa D.; La Via F.; Anzalone R.; Piluso N.; Bergamaschini R.; Marzegalli A.; Miglio L.
A new position sensitive anode for plasmas diagnostic 1-gen-2013 Grasso, R; Tudisco, S; Anzalone, A; Musumeci, F; Scordino, A; Spitaleri, A; Anzalone, R; D'Arrigo, G; La Via, F
Correlation between macroscopic and microscopic stress fields: Application to the 3C-SiC/Si heteroepitaxy 1-gen-2013 Camarda M;Anzalone R;Severino A;Piluso N;Canino A;La Via F;La Magna; A
Micro-Raman analysis and finite-element modeling of 3 C-SiC microstructures 1-gen-2013 Piluso, N; Anzalone, R; Camarda, M; Severino, A; La Magna, A; D'Arrigo, G; La Via, F
Stress fields analysis in 3C-SiC free-standing microstructures by micro-Raman spectroscopy 1-gen-2013 Piluso, N; Anzalone, R; Camarda, M; Severino, A; D'Arrigo, G; La Via, F
Stress nature investigation on heteroepitaxial 3C-SiC film on (100) Si substrates 1-gen-2013 Anzalone, R; Camarda, M; Locke, C; Carballo, J; Piluso, N; La Magna, A; Volinsky, ; A, A; Saddow, ; S, E; Via, La; F,
Stress relaxation study in 3C-SiC microstructures by micro-raman analysis and finite element modeling 1-gen-2013 Piluso, N; Anzalone, R; Severino, A; Canino, A; La Magna, A; D'Arrigo, G; Via, La; F,
Extended characterization of the stress fields in the heteroepitaxial growth of 3C-SiC on silicon for sensors and device applications 1-gen-2012 Camarda, M; Anzalone, R; Piluso, N; Severino, A; Canino, A; La Via, F; Magna, La; A,
Mechanical proprieties and residual stress evaluation on heteroepitaxial 3C-SiC/Si for MEMS application 1-gen-2012 Anzalone, R; D'Arrigo, G; Camarda, M; Piluso, N; Severino, A; Via, La; F,
Micro-Raman analysis of a micromachined 3C-SiC cantilever 1-gen-2012 Piluso, N; Anzalone, R; Camarda, M; Severino, A; D'Arrigo, G; La Magna, A; Via, La; F,
Strain field analysis of 3C-SiC free-standing microstructures by micro-Raman and theoretical modelling 1-gen-2012 Camarda, M; Piluso, N; Anzalone, R; La Magna, A; Via, La; F,