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BOCCHI, CLAUDIO

BOCCHI, CLAUDIO  

Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM  

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Risultati 1 - 20 di 35 (tempo di esecuzione: 0.065 secondi).
Titolo Data di pubblicazione Autore(i) File
MBE growth and properties of low-density InAs/GaAs quantum dot structures 1-gen-2011 Trevisi, Giovanna; Trevisi, Giovanna; Seravalli, Luca; Seravalli, Luca; Frigeri, Paola; Frigeri, Paola; Bocchi, Claudio; Bocchi, Claudio; Grillo, Vincenzo; Grillo, Vincenzo; Nasi, Lucia; Nasi, Lucia; Suarez, ; Isaac, ; Rivas, ; David, ; Munozmatutano, ; Guillermo, ; Martinezpastor, ; Juan,
Low Density Metamorphic Quantum Dot structures with emission in the 1.3 - 1.55 µm window 1-gen-2010 Seravalli, L; Trevisi, G; Frigeri, P; Bocchi, C
Metamorphic quantum dots: Quite different nanostructures 1-gen-2010 Seravalli L.; Frigeri P.; Nasi L.; Trevisi G.; Bocchi C.
Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at 1.3 µm: Effects of InGaAs capping 1-gen-2010 Seravalli, L; Bocchi, C; Trevisi, G; Frigeri, P
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs 1-gen-2009 Rimada, J; Prezioso, M; Nasi, L; Gombia, E; Mosca, R; Trevisi, G; Seravalli, L; Frigeri, P; Bocchi, C; Franchi, S
Growth of vertical InAs nanowires on heterostructured substrates 1-gen-2009 Roddaro S.; Caroff P.; Biasiol G.; Rossi F.; Bocchi C.; Nilsson K.; Froberg L.; Wagner J.; Samuelson L.; Wernersson L.; Sorba L.
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 1-gen-2009 Trevisi G.; Seravalli L.; Frigeri P.; Prezioso M.; Rimada Herrera J. C.; Gombia E.; Mosca R.; Nasi L.; Bocchi C.; Franchi S.
Antireflecting-passivating dielectric films on crystalline silicon solar cells for space applications 1-gen-2008 Barrera M.; Plà J.; Bocchi C.; Migliori A.
Defects in nanostructures with ripened InAs/GaAs quantum dots 1-gen-2008 Nasi L.; Bocchi C.; Germini F.; Prezioso M.; Gombia E.; Mosca R.; Frigeri P.; Trevisi G.; Seravalli L.; Franchi S.
Strong coercivity reduction in perpendicular FePt/Fe bilayers due to hard/soft coupling 1-gen-2008 Casoli F.; Albertini F.; Nasi L.; Fabbrici S.; Cabassi R.; Bolzoni F.; Bocchi C.
Effects of the quantum dot ripening in high-coverage InAs/GaAs nanostructures 1-gen-2007 Frigeri, P; Nasi, L; Prezioso, M; Seravalli, L; Trevisi, G; Gombia, E; Mosca, R; Germini, F; Bocchi, C; Franchi, S
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs 1-gen-2007 Bellani, V; Bocchi, C; Ciabattoni, T; Franchi, S; Frigeri, P; Galinetto, P; Geddo, M; Germini, F; Guizzetti, G; Nasi, L; Patrini, M; Seravalli, L; Trevisi, G
Exchange-coupled FePt/Fe bilayers with perpendicular magnetization 1-gen-2005 Casoli F.; Albertini F.; Fabbrici S.; Bocchi C.; Nasi L.; Ciprian R.; Pareti L.
Growth and characterization of epitaxial FePt films 1-gen-2005 Casoli, F; Albertini, F; Pareti, L; Fabbrici, S; Nasi, L; Bocchi, C; Ciprian, R
Structural and electrical investigation of high temperature annealed As-implanted Si crystals 1-gen-2005 Bocchi C.; Felisari L.; Catellani A.; Cicero G.; Germini F.; Gombia E.; Mosca R.; Nasi L.; Mukhamedzhanov E.K.; Chuev M.A.; Privitera V.; Camalleri M.; Cali D.
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources 1-gen-2004 Begotti, M; Longo, M; Magnanini, R; Parisini, A; Tarricone, L; Bocchi, C; Lazzarini, L; Nasi, L; Geddo, M
Interfaces in AlGaSb/GaSb multiquantum well structures 1-gen-2004 Bocchi, C; Lazzarini, L; Minelli, M; Nasi, L; Mukhamedzhanov, Ek
Atomic environment of Fe in high temperature implanted InP 1-gen-2003 Cesca, T; Gasparotto, A; Bocchi, C; Fraboni, B; Priolo, F; Ciatto, G; D'Acapito, F; Boscherini, F; Rampazzo, V; Mattei, G
Electrical Investigation of Carbon Intrinsically- Doped GaAs Layers Grown by Metalorganic Vapour Phase Epitaxy from TMGa and TBAs 1-gen-2003 Ghezzi, C; Longo, M; Magnanini, R; Parisini, A; Tarricone, L; Carbognani, A; Bocchi, C; Gombia, E
Electrical investigation of Carbon intrinsically-doped GaAs layers grown by Metalorganic Vapour Phase Epitaxy from TMGa and TBAs 1-gen-2003 Ghezzi C.; Longo M.; Magnanini R.; Parisini A.; Tarricone L.; Carbognani A.; Bocchi C.; Gombia E.