SCHILIRO', EMANUELA
SCHILIRO', EMANUELA
Istituto per la Microelettronica e Microsistemi - IMM
Mild Temperature Thermal Treatments of Gold-Exfoliated Monolayer MoS2
2025 Sangiorgi, Emanuele; Madonia, Antonino; Laurella, Gianmarco; Panasci, Salvatore Ethan; Schiliro, Emanuela; Giannazzo, Filippo; Pis, Igor; Bondino, Federica; Radnóczi, György Zoltán; Kovács-Kis, Viktória; Pécz, Béla; Buscarino, Gianpiero; Gelardi, Franco Mario; Cannas, Marco; Agnello, Simonpietro
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates
2024 Schiliro', E.; Greco, G.; Fiorenza, P.; Panasci, S. E.; Di Franco, S.; Cordier, Y.; Frayssinet, E.; Lo Nigro, R.; Giannazzo, F.; Roccaforte, F.
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications
2024 Panasci, SALVATORE ETHAN; Schiliro', Emanuela; Roccaforte, Fabrizio; Giannazzo, Filippo
Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices
2024 Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Koos, A.; Pecz, B.
Interface Properties of MoS2 van der Waals Heterojunctions with GaN
2024 Panasci, S. E.; Deretzis, I.; Schiliro', E.; La Magna, A.; Roccaforte, F.; Koos, A.; Nemeth, M.; Pecz, B.; Cannas, M.; Agnello, S.; Giannazzo, F.
Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)
2024 Galizia, Bruno; Fiorenza, Patrick; Bongiorno, Corrado; Pécz, Béla; Fogarassy, Zsolt; Schiliro', Emanuela; Giannazzo, Filippo; Roccaforte, Fabrizio; LO NIGRO, Raffaella
Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire
2024 Panasci, S. E.; Schiliro', E.; Koos, A.; Roccaforte, F.; Cannas, M.; Agnello, S.; Pecz, B.; Giannazzo, F.
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition
2024 Galizia, Bruno; Fiorenza, Patrick; Schiliro', Emanuela; Pecz, Bela; Foragassy, Zsolt; Greco, Giuseppe; Saggio, Mario; Cascino, Salvatore; Lo Nigro, Raffaella; Roccaforte, Fabrizio
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
2023 Schiliro, Emanuela; Fiorenza, Patrick; Lo Nigro, Raffaella; Galizia, Bruno; Greco, Giuseppe; Di Franco, Salvatore; Bongiorno, Corrado; La Via, Francesco; Giannazzo, Filippo; Roccaforte, Fabrizio
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN
2023 Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Greco, Giuseppe; Roccaforte, F.; Sfuncia, G.; Nicotra, G.; Cannas, M.; Agnello, S.; Frayssinet, E.; Cordier, Y.; Michon, A.; Koos, A.; Pécz, B.
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2
2023 Schiliro', E; Panasci, S. E.; Mio, Am; Nicotra, G; Agnello, S; Pecz, B; Z Radnoczi, Gy; Deretzis, I; La Magna, A.; Roccaforte, F; Lo Nigro, R.; Giannazzo, F
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC
2023 Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Fiorenza, P.; Greco, G.; Roccaforte, F.; Cannas, M.; Agnello, S.; Koos, A.; Pecz, B.; Spankova, M.; Chromik, S.
Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations
2023 Panasci, S. E.; Deretzis, I.; Schiliro', E.; La Magna, A.; Roccaforte, F.; Koos, A.; Pecz, B.; Agnello, S.; Cannas, M.; Giannazzo, F.
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures
2022 Schiliro', E.; Fiorenza, P.; Greco, G.; Monforte, F.; Condorelli, G. G.; Roccaforte, F.; Giannazzo, F.; Lo Nigro, R.
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions
2022 Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Roccaforte, F.; Koos, A.; Nemeth, M.; Pecz, B.
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization
2022 Panasci, S. E.; Koos, A.; Schiliro', E.; Di Franco, S.; Greco, G.; Fiorenza, P.; Roccaforte, F.; Agnello, S.; Cannas, M.; Gelardi, F. M.; Sulyok, A.; Nemeth, M.; Pecz, B.; Giannazzo, F.
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices
2022 Lo Nigro, Raffaella; Fiorenza, Patrick; Greco, Giuseppe; Schiliro', Emanuela; Roccaforte, Fabrizio
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures
2022 Fiorenza, Patrick; Schiliro', Emanuela; Greco, Giuseppe; Vivona, Marilena; Cannas, Marco; Giannazzo, Filippo; Lo Nigro, Raffaella; Roccaforte, Fabrizio
Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS2 Exfoliated on Gold: The Role of the Substrate
2021 Schiliro', E.; Lo Nigro, R.; Panasci, S. E.; Agnello, S.; Cannas, M.; Gelardi, F. M.; Roccaforte, F.; Giannazzo, F.
Highly homogeneous current transport in ultra-thin aluminum nitride (AlN) epitaxial films on gallium nitride (GaN) deposited by plasma enhanced atomic layer deposition
2021 Schiliro', E.; Giannazzo, F.; Di Franco, S.; Greco, G.; Fiorenza, P.; Roccaforte, F.; Prystawko, P.; Kruszewski, P.; Leszczynski, M.; Cora, I.; Pecz, B.; Fogarassy, Z.; Nigro, R. L.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Mild Temperature Thermal Treatments of Gold-Exfoliated Monolayer MoS2 | 1-gen-2025 | Sangiorgi, Emanuele; Madonia, Antonino; Laurella, Gianmarco; Panasci, Salvatore Ethan; Schiliro, Emanuela; Giannazzo, Filippo; Pis, Igor; Bondino, Federica; Radnóczi, György Zoltán; Kovács-Kis, Viktória; Pécz, Béla; Buscarino, Gianpiero; Gelardi, Franco Mario; Cannas, Marco; Agnello, Simonpietro | |
| Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates | 1-gen-2024 | Schiliro', E.; Greco, G.; Fiorenza, P.; Panasci, S. E.; Di Franco, S.; Cordier, Y.; Frayssinet, E.; Lo Nigro, R.; Giannazzo, F.; Roccaforte, F. | |
| Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications | 1-gen-2024 | Panasci, SALVATORE ETHAN; Schiliro', Emanuela; Roccaforte, Fabrizio; Giannazzo, Filippo | |
| Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices | 1-gen-2024 | Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Koos, A.; Pecz, B. | |
| Interface Properties of MoS2 van der Waals Heterojunctions with GaN | 1-gen-2024 | Panasci, S. E.; Deretzis, I.; Schiliro', E.; La Magna, A.; Roccaforte, F.; Koos, A.; Nemeth, M.; Pecz, B.; Cannas, M.; Agnello, S.; Giannazzo, F. | |
| Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) | 1-gen-2024 | Galizia, Bruno; Fiorenza, Patrick; Bongiorno, Corrado; Pécz, Béla; Fogarassy, Zsolt; Schiliro', Emanuela; Giannazzo, Filippo; Roccaforte, Fabrizio; LO NIGRO, Raffaella | |
| Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire | 1-gen-2024 | Panasci, S. E.; Schiliro', E.; Koos, A.; Roccaforte, F.; Cannas, M.; Agnello, S.; Pecz, B.; Giannazzo, F. | |
| Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition | 1-gen-2024 | Galizia, Bruno; Fiorenza, Patrick; Schiliro', Emanuela; Pecz, Bela; Foragassy, Zsolt; Greco, Giuseppe; Saggio, Mario; Cascino, Salvatore; Lo Nigro, Raffaella; Roccaforte, Fabrizio | |
| Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices | 1-gen-2023 | Schiliro, Emanuela; Fiorenza, Patrick; Lo Nigro, Raffaella; Galizia, Bruno; Greco, Giuseppe; Di Franco, Salvatore; Bongiorno, Corrado; La Via, Francesco; Giannazzo, Filippo; Roccaforte, Fabrizio | |
| Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN | 1-gen-2023 | Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Greco, Giuseppe; Roccaforte, F.; Sfuncia, G.; Nicotra, G.; Cannas, M.; Agnello, S.; Frayssinet, E.; Cordier, Y.; Michon, A.; Koos, A.; Pécz, B. | |
| Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 | 1-gen-2023 | Schiliro', E; Panasci, S. E.; Mio, Am; Nicotra, G; Agnello, S; Pecz, B; Z Radnoczi, Gy; Deretzis, I; La Magna, A.; Roccaforte, F; Lo Nigro, R.; Giannazzo, F | |
| Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC | 1-gen-2023 | Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Fiorenza, P.; Greco, G.; Roccaforte, F.; Cannas, M.; Agnello, S.; Koos, A.; Pecz, B.; Spankova, M.; Chromik, S. | |
| Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations | 1-gen-2023 | Panasci, S. E.; Deretzis, I.; Schiliro', E.; La Magna, A.; Roccaforte, F.; Koos, A.; Pecz, B.; Agnello, S.; Cannas, M.; Giannazzo, F. | |
| Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures | 1-gen-2022 | Schiliro', E.; Fiorenza, P.; Greco, G.; Monforte, F.; Condorelli, G. G.; Roccaforte, F.; Giannazzo, F.; Lo Nigro, R. | |
| Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions | 1-gen-2022 | Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Roccaforte, F.; Koos, A.; Nemeth, M.; Pecz, B. | |
| Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization | 1-gen-2022 | Panasci, S. E.; Koos, A.; Schiliro', E.; Di Franco, S.; Greco, G.; Fiorenza, P.; Roccaforte, F.; Agnello, S.; Cannas, M.; Gelardi, F. M.; Sulyok, A.; Nemeth, M.; Pecz, B.; Giannazzo, F. | |
| Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices | 1-gen-2022 | Lo Nigro, Raffaella; Fiorenza, Patrick; Greco, Giuseppe; Schiliro', Emanuela; Roccaforte, Fabrizio | |
| Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures | 1-gen-2022 | Fiorenza, Patrick; Schiliro', Emanuela; Greco, Giuseppe; Vivona, Marilena; Cannas, Marco; Giannazzo, Filippo; Lo Nigro, Raffaella; Roccaforte, Fabrizio | |
| Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS2 Exfoliated on Gold: The Role of the Substrate | 1-gen-2021 | Schiliro', E.; Lo Nigro, R.; Panasci, S. E.; Agnello, S.; Cannas, M.; Gelardi, F. M.; Roccaforte, F.; Giannazzo, F. | |
| Highly homogeneous current transport in ultra-thin aluminum nitride (AlN) epitaxial films on gallium nitride (GaN) deposited by plasma enhanced atomic layer deposition | 1-gen-2021 | Schiliro', E.; Giannazzo, F.; Di Franco, S.; Greco, G.; Fiorenza, P.; Roccaforte, F.; Prystawko, P.; Kruszewski, P.; Leszczynski, M.; Cora, I.; Pecz, B.; Fogarassy, Z.; Nigro, R. L. |