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EVANGELISTI, FLORESTANO

EVANGELISTI, FLORESTANO  

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Risultati 1 - 17 di 17 (tempo di esecuzione: 0.025 secondi).
Titolo Data di pubblicazione Autore(i) File
2DEG based on strained Si on SGOI substrate 1-gen-2008 L. Di Gaspare ; A. Notargiacomo ; E. Giovine ; M. De Seta ; G. Capellini ; M. Pea ; G. Ciasca ; F. Evangelisti
Active electric near field imaging of electronic devices 1-gen-2008 Coppa, A; Foglietti, V; Giovine, E; Doria, A; Gallerano, Gp; Giovenale, E; Cetronio, A; Lanzieri, C; Peroni, M; Evangelisti, F
Conductance quantization in etched Si/SiGe quantum point contacts 1-gen-2006 Scappucci, G; Di Gaspare, L; Giovine, E; Notargiacomo, A; Leoni, R; Evangelisti, F
Conduction band intersubband transitions in Ge/SiGe quantum wells 1-gen-2009 M. De Seta; G. Capellini; Y. Busby; F. Evangelisti; M. Ortolani; M. Virgilio; G. Grosso; G. Pizzi; A. Nucara;S. Lupi
Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection 1-gen-2013 Bagni, R; Giovine, E; Carta, S; DI GASPARE, Alessandra; Casini, R; Ortolani, M; Foglietti, V; Evangelisti, F; Notargiacomo, A
Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques 1-gen-2013 S. Carta ; R. Bagni ; E. Giovine ; V Foglietti ; F. Evangelisti ; A. Notargiacomo
Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field 1-gen-2009 M. Ortolani ; A. Di Gaspare ; E. Giovine ; F. Evangelisti ; V. Foglietti ; A. Doria ; G. P. Gallerano ; E. Giovenale ; G. Messina ; I. Spassovsky ; C. Lanzieri ; M. Peroni ; A. Cetronio .
Intermixing-promoted scaling of Ge/Si(100) island sizes 1-gen-2002 M. De Seta; G. Capellini; F. Evangelisti; C. Spinella
Investigation of SiGe-heterostructure nanowires 1-gen-2001 E Giovine ; A Notargiacomo ; L Di Gaspare ; E Palange ; F Evangelisti ; R Leoni ; G Castellano ; G Torrioli ;V Foglietti
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures 1-gen-2009 A. Notargiacomo; L. Di Gaspare; F. Evangelisti
Ordered growth of Ge island clusters on strain-engineered Si surfaces 1-gen-2005 De Seta, M; Capellini, G; Evangelisti, F
Relaxed state of GexSi1-x islands embedded in Si 1-gen-2006 D'Acapito, F; de Seta, M; Capellini, G; di Gaspare, L; Evangelisti, F
Self-ordering of Ge islands on Si(001) by means of Si overgrowth 1-gen-2006 G. Capellini; M. De Seta; F. Evangelisti; V. A. Zinovyev; G. Vastola; F. Montalenti; Leo Miglio
Single-electron transistor based on modulation-doped SiGe heterostructures. 1-gen-2003 Notargiacomo, A; Di Gaspare, L; Scappucci, G; Mariottini, G; Evangelisti, F; Giovine, E; Leoni, R
Study of the Coupling of Terahertz Radiation to Heterostructure Transistors with a Free Electron Laser Source 1-gen-2009 Ortolani, M; DI GASPARE, Alessandra; Giovine, E; Evangelisti, F; Foglietti, V; Doria, A; P Gallerano, G; Giovenale, E; Messina, G; Spassovsky, I; Lanzieri, C; Peroni, M; Cetronio, A
Terahertz intersubband absorption and conduction band alignment in n -type Si/SiGe multiple quantum wells 1-gen-2009 Ciasca, G; De Seta, M; Capellini, G; Evangelisti, F; Ortolani, M; Virgilio, M; Grosso, G; Nucara, A; Calvani, P
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 1-gen-2009 Ciasca, G; De Seta, M; Capellini, G; Evangelisti, F; Ortolani, M; Virgilio, M; Grosso, G Nucara A; Calvani, P