CNR Institutional Research Information System

FORNARI, ROBERTO
 Distribuzione geografica
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Continente #
AS - Asia 1.520
NA - Nord America 902
EU - Europa 387
SA - Sud America 309
AF - Africa 32
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 1
Totale 3.158
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Nazione #
US - Stati Uniti d'America 856
SG - Singapore 605
CN - Cina 370
BR - Brasile 261
VN - Vietnam 210
HK - Hong Kong 154
IT - Italia 113
FR - Francia 92
KR - Corea 48
DE - Germania 33
GB - Regno Unito 33
JP - Giappone 33
IN - India 27
NL - Olanda 26
CA - Canada 19
AR - Argentina 18
MX - Messico 17
FI - Finlandia 16
AT - Austria 13
BD - Bangladesh 13
IL - Israele 10
EC - Ecuador 9
ES - Italia 9
IQ - Iraq 9
TR - Turchia 8
ZA - Sudafrica 8
ID - Indonesia 7
SA - Arabia Saudita 6
SE - Svezia 6
CO - Colombia 5
IE - Irlanda 5
MA - Marocco 5
NZ - Nuova Zelanda 5
PL - Polonia 5
PY - Paraguay 5
UA - Ucraina 5
EG - Egitto 4
TN - Tunisia 4
CL - Cile 3
CR - Costa Rica 3
CZ - Repubblica Ceca 3
EE - Estonia 3
KE - Kenya 3
LT - Lituania 3
NO - Norvegia 3
PE - Perù 3
AE - Emirati Arabi Uniti 2
AU - Australia 2
AZ - Azerbaigian 2
BO - Bolivia 2
CH - Svizzera 2
CM - Camerun 2
DZ - Algeria 2
KZ - Kazakistan 2
MK - Macedonia 2
NP - Nepal 2
PH - Filippine 2
PK - Pakistan 2
RO - Romania 2
RS - Serbia 2
RU - Federazione Russa 2
SK - Slovacchia (Repubblica Slovacca) 2
TT - Trinidad e Tobago 2
VE - Venezuela 2
AO - Angola 1
AW - Aruba 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
BH - Bahrain 1
BY - Bielorussia 1
CY - Cipro 1
DO - Repubblica Dominicana 1
ET - Etiopia 1
GR - Grecia 1
HN - Honduras 1
JM - Giamaica 1
LK - Sri Lanka 1
LV - Lettonia 1
MD - Moldavia 1
MN - Mongolia 1
MR - Mauritania 1
MT - Malta 1
MU - Mauritius 1
MY - Malesia 1
PA - Panama 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TW - Taiwan 1
UY - Uruguay 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 3.158
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Città #
Singapore 354
Santa Clara 265
Hong Kong 148
Dallas 133
Beijing 97
Hefei 95
San Jose 90
Ho Chi Minh City 80
Lauterbourg 70
Seoul 48
Ashburn 47
Los Angeles 36
Hanoi 33
Tokyo 24
New York 18
Orem 18
Parma 16
São Paulo 16
Council Bluffs 14
Redondo Beach 9
Rome 9
Belo Horizonte 8
Biên Hòa 8
Buffalo 8
Da Nang 8
Hải Dương 8
Milan 8
Turku 8
Frankfurt am Main 7
Montreal 7
Phoenix 7
Potenza 7
Thái Nguyên 7
Bắc Ninh 6
Casalnuovo di Napoli 6
Chennai 6
Genoa 6
Haiphong 6
Madrid 6
Munich 6
Salvador 6
Stockholm 6
Caxias do Sul 5
Düsseldorf 5
Guangzhou 5
Mexico City 5
Minamishinagawa 5
New Delhi 5
Rio de Janeiro 5
Saint-Martin-d'Hères 5
Vienna 5
Baghdad 4
Bengaluru 4
Brooklyn 4
Cairo 4
Denver 4
Helsinki 4
Lappeenranta 4
London 4
Manchester 4
Nuremberg 4
Quito 4
Santo André 4
Warsaw 4
Aci Catena 3
Amsterdam 3
Ankara 3
Atlanta 3
Auckland 3
Berlin 3
Bologna 3
Bình Dương Province 3
Cape Town 3
Cavallino 3
Contagem 3
Curitiba 3
Dhaka 3
Divinópolis 3
Dublin 3
Fidenza 3
Garanhuns 3
Glasgow 3
Guayaquil 3
Kyiv 3
Lima 3
Macaé 3
Magé 3
Nairobi 3
Nova Iguaçu 3
Passo Fundo 3
Prague 3
Quảng Ngãi 3
Quận Bình Thạnh 3
Rio Claro 3
Shanghai 3
Sorocaba 3
Tel Aviv 3
The Bronx 3
Toronto 3
Xi'an 3
Totale 1.970
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Nome #
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 94
Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates 91
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 83
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 83
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors 74
Si and Sn doping of epsilon-Ga2O3 layers 73
Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction 69
Orthorhombic undoped k-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors 69
Theoretical and experimental investigation of optical absorption anisotropy in beta-Ga2O3 67
Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study 67
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 66
Tetravalent Element Doping of β-Ga₂O₃ Films Grown by Pulsed Electron Deposition Technique 66
Incorporation and electrical activity of Fe in LEC InP 65
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 60
Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation) 60
Single-phase κ-Ga2O3 films deposited by metal-organic chemical vapor deposition on GaAs and ternary BxGa(1-x)As templates 57
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts 55
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 55
Epitaxial Growth of GaN/Ga2O3 and Ga2O3/GaN Heterostructures for Novel High Electron Mobility Transistors 53
Microdefect studies of Fe-doped Semi-Insulating InP 52
In situ TEM study of K->gamma and K->delta phase transformations in Ga2O3 52
Thermodynamic and Kinetic Effects on the Nucleation and Growth of epsilon/kappa- or beta-Ga2O3 by Metal-Organic Vapor Phase Epitaxy 52
Hetero-epitaxy of epsilon-Ga2O3 layers by MOCVD and ALD 50
epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors 50
Cathodoluminescence of undoped and Si-doped ε-Ga2O3 films 49
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3and the impact of rotational domains 47
The real structure of Ga2O3 and its relation to epsilon-phase 47
The electronic structure of epsilon-Ga2O3 46
Vapor Phase Epitaxial growth and properties of III-nitride materials 45
n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion 44
Study of SnO/-Ga2O3p - N diodes in planar geometry 43
Semi-insulating behaviour of n-type lightly Fe-doped InP wafers after thermal annealing 42
A study of convection, striations and interface shape in InP crystals grown by the double-crucible LEC technique 39
Gallium Oxide: A Rising Star in the Semiconductor Realm 37
Sol-gel growth and characterization of In2O3 thin films 36
Thermal stability of ?-Ga2O3 polymorph 36
Iron segregation in LEC InP crystals 35
Ga2O3polymorphs: tailoring the epitaxial growth conditions 33
Hydride vapour phase epitaxy growth and characterization of GaN layers 33
Crystal structure and ferroelectric properties of epsilon-Ga2O3 films grown on (0001)-sapphire 32
Thermal stability of epsilon-Ga2O3 polymorph 31
Growth of semi-insulating InP with uniform axial Fe-doping by a double-crucible LEC technique 30
Microstructure of hexagonal GaN grown on (001) GaAs by Hydride VPE 29
Progress in MOVPE growth of Ga2O3 29
Effects of the melt composition on structural and electrical characteristics of bulk Gallim Arsenide 29
Effect of growth parameters on iron incorporation in semi-insulating LEC Indium Phosphide 29
Structural and electrical properties of n-type bulk gallium arsenide grown from non-stoichiometric melts 28
Electrical and optical properties of semi-insulating InP obtained by wafer and ingot annealing 28
Properties of InGaN layers grown by atmospheric pressure MOVPE 28
Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers 26
Nitride-based hetero-structures for opto-electronic devices in the UV-Vis ran 26
Relationship between melt composition, dislocations, precipitates and electron mobility in n-type LEC GaAs 26
Scanning -DLTS and TEM-investigations in LEC GaAs: new arguments on the EL2-generation mechanism 25
Recent improvements in detection performances of radiation detectors based on bulk semi-insulating inp 25
Conductivity conversion of lightly Fe-doped InP induced by thermal annealing: A method for semi-insulating material production 25
Factors affecting the luminescence emission of InGaN multi-quantum wells grown on (0001) sapphire substrates by MOVPE 25
The growth from the melt and its application to production of semiconductor single crystals 25
Microdefect studies of Fe-doped Semi-Insulating InP 25
Effects of thermal annealing on gan epilayers deposited on (0001) sapphire 24
Assessment of Trapping Phenomena in As-Grown and Thermally-Treated Si-Doped κ-Ga2O3 Layers via Optical Admittance Spectroscopy 24
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 24
Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing 23
Homogeneity of thermally annealed Fe-doped InP wafers 23
Influence of the ingot and wafer annealing on the homogeneity of Fe-doped semi-insulating InP wafers 23
Assessment of the short and long range homogeneity of MOVPE-grown InGan epilayers 22
Precipitates and deep levels in n-type LEC GaAs 22
Complementary study of Indentation-induced dislocations in GaAs and InP by Photoetching, SEM, EBIC and SPL 22
Effects of melt composition on deep electronic states and compensation ratios in n-type LEC gallium arsenide 22
Coupled experimental and TCAD analysis of NiO/Ga2O3 photodiodes for UV-C detection applications 21
Role of electron technology in radiation detector based on semi-insulating InP in development of detector array 21
A study of In incorporation in InGaN layers grown by atmospheric pressure MOVPE 20
Correlation of crystal defects and galvanomagnetic parameters of semi-insulating inp with performance of radiation detectors fabricated from characterised materials 20
Influence of non-stoichiometric melts on the defect structure of n-type bulk GaAs crystals 20
Preparation and characterization of semi-insulating undoped indium phosphide 20
Zur Realstruktur von Nicht-stoichiometrisch gezogen GaAs-Ein Kristallen 20
Semi-insulating InP particle detectors for X- and gamma-ray detection 20
Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy 20
Effect of lithium diffusion into Ga2O3 thin films 19
Influence of non-stoichiometric melts on the defect structure of n-type bulk GaAs crystals 18
Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga2O3on Al2O3(0001) and GaN (0001) Substrates 18
Determination of traces of Iron in Indium Phosphide by electro-thermal atomic absorption spectroscopy combined with solvent extraction 17
A study of microdefects in n-type doped gaAs crystals using Cathodoluminescence and x-ray techniques 17
Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL 17
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3 16
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 16
Complementary study of Indentation-induced dislocations in GaAs and InP by Photoetching, SEM, SPL and EBIC 16
Structural Characterization of heavily Zn-doped LEC InP 15
Precipitates and deep levels in n-type LEC GaAs 13
Totale 3.289
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Categoria #
all - tutte 10.855
article - articoli 7.877
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 119
Totale 18.851
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202440 0 0 0 0 0 0 0 0 14 0 26 0
2024/20251.236 4 3 74 39 286 41 37 85 71 63 289 244
2025/20262.013 101 345 201 272 285 79 339 103 115 128 45 0
Totale 3.289