CNR Institutional Research Information System

FORNARI, ROBERTO
 Distribuzione geografica
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Continente #
AS - Asia 1.550
NA - Nord America 1.103
EU - Europa 405
SA - Sud America 317
Continente sconosciuto - Info sul continente non disponibili 132
AF - Africa 33
OC - Oceania 7
Totale 3.547
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Nazione #
US - Stati Uniti d'America 1.040
SG - Singapore 605
CN - Cina 387
BR - Brasile 265
VN - Vietnam 214
HK - Hong Kong 156
IT - Italia 123
FR - Francia 97
KR - Corea 48
GB - Regno Unito 35
JP - Giappone 34
DE - Germania 33
CA - Canada 27
IN - India 27
NL - Olanda 27
AR - Argentina 19
MX - Messico 17
FI - Finlandia 16
BD - Bangladesh 15
AT - Austria 13
EC - Ecuador 11
IL - Israele 10
ES - Italia 9
IQ - Iraq 9
ID - Indonesia 8
TR - Turchia 8
ZA - Sudafrica 8
CO - Colombia 6
SA - Arabia Saudita 6
SE - Svezia 6
IE - Irlanda 5
MA - Marocco 5
NZ - Nuova Zelanda 5
PL - Polonia 5
PY - Paraguay 5
UA - Ucraina 5
CR - Costa Rica 4
EG - Egitto 4
JM - Giamaica 4
TN - Tunisia 4
TT - Trinidad e Tobago 4
CL - Cile 3
CZ - Repubblica Ceca 3
EE - Estonia 3
KE - Kenya 3
LT - Lituania 3
MY - Malesia 3
NO - Norvegia 3
PE - Perù 3
AE - Emirati Arabi Uniti 2
AU - Australia 2
AZ - Azerbaigian 2
BO - Bolivia 2
CH - Svizzera 2
CM - Camerun 2
DZ - Algeria 2
HN - Honduras 2
KZ - Kazakistan 2
MK - Macedonia 2
NP - Nepal 2
PH - Filippine 2
PK - Pakistan 2
RO - Romania 2
RS - Serbia 2
RU - Federazione Russa 2
SK - Slovacchia (Repubblica Slovacca) 2
VE - Venezuela 2
AO - Angola 1
AW - Aruba 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
BH - Bahrain 1
BY - Bielorussia 1
CY - Cipro 1
DO - Repubblica Dominicana 1
ET - Etiopia 1
GR - Grecia 1
LK - Sri Lanka 1
LV - Lettonia 1
MD - Moldavia 1
MN - Mongolia 1
MR - Mauritania 1
MT - Malta 1
MU - Mauritius 1
NI - Nicaragua 1
PA - Panama 1
SC - Seychelles 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TW - Taiwan 1
UY - Uruguay 1
UZ - Uzbekistan 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 3.416
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Città #
Singapore 354
Santa Clara 277
Hong Kong 148
Dallas 136
San Jose 105
Beijing 97
Hefei 95
Ho Chi Minh City 81
Ashburn 77
Lauterbourg 70
Seoul 48
Los Angeles 37
Hanoi 34
Tokyo 24
New York 19
Orem 18
Parma 16
São Paulo 16
Council Bluffs 14
Buffalo 10
Rome 10
Milan 9
Montreal 9
Phoenix 9
Redondo Beach 9
Belo Horizonte 8
Biên Hòa 8
Da Nang 8
Hải Dương 8
Turku 8
Frankfurt am Main 7
Potenza 7
Salvador 7
Thái Nguyên 7
Bắc Ninh 6
Casalnuovo di Napoli 6
Chennai 6
Detroit 6
Genoa 6
Guangzhou 6
Haiphong 6
Madrid 6
Munich 6
Stockholm 6
Caxias do Sul 5
Düsseldorf 5
Las Vegas 5
Mexico City 5
Minamishinagawa 5
New Delhi 5
Quito 5
Rio de Janeiro 5
Saint-Martin-d'Hères 5
Toronto 5
Vienna 5
Atlanta 4
Baghdad 4
Bengaluru 4
Brooklyn 4
Cairo 4
Chicago 4
Columbia 4
Denver 4
Guayaquil 4
Helsinki 4
Lappeenranta 4
London 4
Manchester 4
Nuremberg 4
Pittsburgh 4
Santo André 4
Warsaw 4
Aci Catena 3
Amsterdam 3
Ankara 3
Auckland 3
Berlin 3
Bologna 3
Bình Dương Province 3
Cape Town 3
Cavallino 3
Chaguanas 3
Contagem 3
Curitiba 3
Dhaka 3
Divinópolis 3
Dublin 3
Fidenza 3
Garanhuns 3
Glasgow 3
Jacksonville 3
Kyiv 3
Lima 3
Macaé 3
Magé 3
Memphis 3
Monza 3
Nairobi 3
Nova Iguaçu 3
Passo Fundo 3
Totale 2.057
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Nome #
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 98
Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates 96
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 90
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 86
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors 78
Si and Sn doping of epsilon-Ga2O3 layers 75
Tetravalent Element Doping of β-Ga₂O₃ Films Grown by Pulsed Electron Deposition Technique 72
Orthorhombic undoped k-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors 71
Theoretical and experimental investigation of optical absorption anisotropy in beta-Ga2O3 70
Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study 70
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 69
Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction 69
The real structure of Ga2O3 and its relation to epsilon-phase 68
Incorporation and electrical activity of Fe in LEC InP 67
Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation) 63
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 62
Single-phase κ-Ga2O3 films deposited by metal-organic chemical vapor deposition on GaAs and ternary BxGa(1-x)As templates 61
Epitaxial Growth of GaN/Ga2O3 and Ga2O3/GaN Heterostructures for Novel High Electron Mobility Transistors 61
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts 58
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 58
In situ TEM study of K->gamma and K->delta phase transformations in Ga2O3 57
Hetero-epitaxy of epsilon-Ga2O3 layers by MOCVD and ALD 57
Thermodynamic and Kinetic Effects on the Nucleation and Growth of epsilon/kappa- or beta-Ga2O3 by Metal-Organic Vapor Phase Epitaxy 56
The electronic structure of epsilon-Ga2O3 54
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3and the impact of rotational domains 54
Microdefect studies of Fe-doped Semi-Insulating InP 52
epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors 52
Cathodoluminescence of undoped and Si-doped ε-Ga2O3 films 50
Study of SnO/-Ga2O3p - N diodes in planar geometry 46
Vapor Phase Epitaxial growth and properties of III-nitride materials 45
n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion 45
Semi-insulating behaviour of n-type lightly Fe-doped InP wafers after thermal annealing 44
A study of convection, striations and interface shape in InP crystals grown by the double-crucible LEC technique 44
Crystal structure and ferroelectric properties of epsilon-Ga2O3 films grown on (0001)-sapphire 44
Thermal stability of ?-Ga2O3 polymorph 43
Sol-gel growth and characterization of In2O3 thin films 40
Gallium Oxide: A Rising Star in the Semiconductor Realm 38
Iron segregation in LEC InP crystals 37
Thermal stability of epsilon-Ga2O3 polymorph 35
Growth of semi-insulating InP with uniform axial Fe-doping by a double-crucible LEC technique 35
Hydride vapour phase epitaxy growth and characterization of GaN layers 35
Ga2O3polymorphs: tailoring the epitaxial growth conditions 33
Coupled experimental and TCAD analysis of NiO/Ga2O3 photodiodes for UV-C detection applications 32
Electrical and optical properties of semi-insulating InP obtained by wafer and ingot annealing 31
Effect of growth parameters on iron incorporation in semi-insulating LEC Indium Phosphide 31
Assessment of Trapping Phenomena in As-Grown and Thermally-Treated Si-Doped κ-Ga2O3 Layers via Optical Admittance Spectroscopy 30
Properties of InGaN layers grown by atmospheric pressure MOVPE 30
Structural and electrical properties of n-type bulk gallium arsenide grown from non-stoichiometric melts 29
Microstructure of hexagonal GaN grown on (001) GaAs by Hydride VPE 29
Nitride-based hetero-structures for opto-electronic devices in the UV-Vis ran 29
Progress in MOVPE growth of Ga2O3 29
Effects of the melt composition on structural and electrical characteristics of bulk Gallim Arsenide 29
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 29
Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing 28
Recent improvements in detection performances of radiation detectors based on bulk semi-insulating inp 28
Microdefect studies of Fe-doped Semi-Insulating InP 28
Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers 27
Relationship between melt composition, dislocations, precipitates and electron mobility in n-type LEC GaAs 26
Conductivity conversion of lightly Fe-doped InP induced by thermal annealing: A method for semi-insulating material production 26
Effects of thermal annealing on gan epilayers deposited on (0001) sapphire 26
Factors affecting the luminescence emission of InGaN multi-quantum wells grown on (0001) sapphire substrates by MOVPE 26
The growth from the melt and its application to production of semiconductor single crystals 26
Scanning -DLTS and TEM-investigations in LEC GaAs: new arguments on the EL2-generation mechanism 25
Homogeneity of thermally annealed Fe-doped InP wafers 25
Assessment of the short and long range homogeneity of MOVPE-grown InGan epilayers 25
Influence of the ingot and wafer annealing on the homogeneity of Fe-doped semi-insulating InP wafers 25
Effects of melt composition on deep electronic states and compensation ratios in n-type LEC gallium arsenide 24
Correlation of crystal defects and galvanomagnetic parameters of semi-insulating inp with performance of radiation detectors fabricated from characterised materials 23
Influence of non-stoichiometric melts on the defect structure of n-type bulk GaAs crystals 23
Precipitates and deep levels in n-type LEC GaAs 23
Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga2O3on Al2O3(0001) and GaN (0001) Substrates 23
Complementary study of Indentation-induced dislocations in GaAs and InP by Photoetching, SEM, EBIC and SPL 22
A study of In incorporation in InGaN layers grown by atmospheric pressure MOVPE 21
Role of electron technology in radiation detector based on semi-insulating InP in development of detector array 21
Effect of lithium diffusion into Ga2O3 thin films 21
Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy 21
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3 20
Preparation and characterization of semi-insulating undoped indium phosphide 20
Zur Realstruktur von Nicht-stoichiometrisch gezogen GaAs-Ein Kristallen 20
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 20
Semi-insulating InP particle detectors for X- and gamma-ray detection 20
Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL 19
Influence of non-stoichiometric melts on the defect structure of n-type bulk GaAs crystals 18
Determination of traces of Iron in Indium Phosphide by electro-thermal atomic absorption spectroscopy combined with solvent extraction 18
Complementary study of Indentation-induced dislocations in GaAs and InP by Photoetching, SEM, SPL and EBIC 18
A study of microdefects in n-type doped gaAs crystals using Cathodoluminescence and x-ray techniques 17
Structural Characterization of heavily Zn-doped LEC InP 15
Precipitates and deep levels in n-type LEC GaAs 13
Totale 3.547
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Categoria #
all - tutte 12.808
article - articoli 9.337
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 138
Totale 22.283
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202440 0 0 0 0 0 0 0 0 14 0 26 0
2024/20251.236 4 3 74 39 286 41 37 85 71 63 289 244
2025/20262.076 101 345 201 272 285 79 339 103 115 128 54 54
2026/2027195 150 45 0 0 0 0 0 0 0 0 0 0
Totale 3.547