CRISTIANI, STEFANO

CRISTIANI, STEFANO  

Istituto Officina dei Materiali - IOM -  

Mostra records
Risultati 1 - 16 di 16 (tempo di esecuzione: 0.028 secondi).
Titolo Data di pubblicazione Autore(i) File
Alternative use of tobacco as a sustainable crop for seed oil, biofuel, and biomass 1-gen-2016 Grisan, S; Polizzotto, R; Raiola, P; Cristiani, S; Ventura, F; di Lucia, F; Zuin, M; Tommasini, S; Morbidelli, R; Damiani, F; Pupilli, F; Bellucci, M
Improving doping efficiency of P(+) implanted ions in 4H-SiC 1-gen-2011 Nipoti, R; Nath, A; Cristiani, S; Sanmartin, M; Rao, Mv
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 1-gen-2009 Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Cristiani, S; Sanmartin, M
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 1-gen-2009 Moscatelli, Francesco; Moscatelli, Francesco; Nipoti, Roberta; Nipoti, Roberta; Solmi, Sandro; Solmi, Sandro; Cristiani, Stefano; Cristiani, Stefano; Sanmartin, Michele; Sanmartin, Michele; Poggi, Antonella; Poggi, Antonella
A packaging technique for silicon MEMS strain sensors on steel 1-gen-2008 Ferri M; Cristiani S; Kobayashi Y; Soga K;Roncaglia A
A packaging technique for silicon MEMS strain sensors on steel 1-gen-2008 Ferri, M; Cristiani, S; Kobayashi, Y; Soga, K; Roncaglia, A
A packaging technique for silicon MEMS strain sensors on steel 1-gen-2008 Ferri, M; Cristiani, S; Roncaglia, A; Kobayashi, Y; Soga, K.
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation 1-gen-2007 Hijikata Y; Yoshida S; Moscatelli F; Poggi A; Solmi S; Cristiani S; Nipoti R
Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation 1-gen-2007 Hijikata, Y; Yoshida, S; Moscatelli, F; Poggi, A; Solmi, S; Cristiani, S; Nipoti, R
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 1-gen-2007 Moscatelli, F; Nipoti, R; Solmi, S; Cristiani, S; Sanmartin, M; Poggi, A
Ion implantation of silicon at the nanometer scale 1-gen-2007 Bianconi, M; Bergamini, F; Cristiani, S; Lulli, G
Wet and vapor etching of tracks produced in SiO2 by Ti ion irradiation 1-gen-2007 Bergamini, F; Bianconi, M; Cristiani, S
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 1-gen-2006 Hijikata, Y; Yoshida, S; Moscatelli, F; Poggi, A; Solmi, S; Cristiani, S; Nipoti, R
Process dependence of doped polysilicon thermal conductivity for thermal MEMS applications 1-gen-2006 Mancarella, F; Roncaglia, A; Cristiani, S; Cardinali, Gc; Severi, M
Thermoelectric figure of merit variation in phosphorous and boron doped polysilicon films with annealing temperature 1-gen-2006 Mancarella F; Roncaglia A; Cristiani S; Cardinali GC; Severi M
Wafer-level measurement of thin films thermoelectric power 1-gen-2005 Roncaglia, A; Mancarella, F; Cardinali, Gc; Cristiani, S; Sanmartin, M; Severi, M