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LULLI, GIORGIO

LULLI, GIORGIO  

Istituto per la Microelettronica e Microsistemi - IMM  

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Contributo al femminile all'educazione tecnica e scientifica per le materie STEM. Fare rete tra scienziate/i, enti, università, associazioni, media e portatori d'interesse 1-gen-2022 D'Angelantonio, Mila; Avveduto, Sveva; Azzali, Ludovica; Baroni, Francesca; Flavia Bianchi, Anna; Borsari, Alan; Camporesi, Roberto; Colella, Patrizia; DE NUNTIIS, Paola; Govoni, Paola; Ferrari, Michele; Levrini, Olivia; Lulli, Giorgio; Mangia, Cristina; Palazzolo, Carmela; Rubbia, Giuliana; Venturi, Laura; Venturi, Margherita; Ravaioli, Mariangela
Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With Al+ Ions 1-gen-2011 Lulli, G
Summary of IAEA intercomparison of IBA software 1-gen-2008 Barrada NP; Arstila K; Battistig G; Bianconi M; Dytlewski N; Jeynes C; Kotai E; Lulli G; Mayer M; Rauhala E; Szilagyi E; Thompson M
International Atomic Energy Agency Intercomparison of ion beam analysis software 1-gen-2007 Barradas, Np; Arstila, K; Battistig, G; Bianconi, M; Dytlewski, N; Jeynes, C; Kotai, E; Lulli, G; Mayer, M; Rauhala, E; Szilagyi, E; Thompson, M
Ion implantation of silicon at the nanometer scale 1-gen-2007 Bianconi, M; Bergamini, F; Cristiani, S; Lulli, G
RBS-channeling analysis of ion-irradiation effects in heavily-doped Si : As 1-gen-2007 G. Lulli; M. Bianconi; M. Ferri; G. Fortunato; L. Mariucci
Defect-induced homogeneous amorphization of silicon: the role of defect structure and population 1-gen-2006 Lulli, G; Albertazzi, E; Balboni, S; Colombo, L
RBS channeling analysis of ion irradiation effects in heavily doped Si:As 1-gen-2006 Lulli, G; Bianconi, M; Ferri, M; Fortunato, G; Mariucci, L
Ab initio structures of AsmV complexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon 1-gen-2005 Satta, A; Albertazzi, E; Lulli, G; Colombo, L
Atomistic simulation of ion channeling in heavily doped Si : As 1-gen-2005 Satta A.; Albertazzi E.; Bianconi M.; Lulli G.; Balboni S.; Colombo L.
Channeling characterization of defects in silicon: an atomistic approach 1-gen-2005 Bianconi, M; Albertazzi, E; Balboni, S; Colombo, L; Lulli, G; Satta, A
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra 1-gen-2005 Lulli G.; Albertazzi E.; Bianconi M.; Satta A.; Balboni S.; Colombo L.; Uguzzoni A.
Analysis of ion implanted silicon by RBS-channeling: influence of the damage model 1-gen-2004 Bianconi, M; Albertazzi, E; Balboni, S; Lulli, G
Damage and recovery in doped SOI layers after high energy implantation 1-gen-2004 Ferri, M; Solmi, S; Armigliato, A; Bianconi, M; Lulli, G; Nobili, D
Damage and recovery in doped SOI layers after high energy implantation 1-gen-2004 Ferri, M; Solmi, S; Armigliato, A; Bianconi, M; Lulli, G; Nobili, D
Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters 1-gen-2004 Lulli, G; Albertazzi, E; Bianconi, M; Satta, A; Balboni, S; Colombo, L
Structural characterization and modeling of damage accumulation in In implanted Si 1-gen-2004 Lulli, G; Bianconi, M; Parisini, A; Napolitani, E
Analysis of ion implanted Silicon by RBS-channeling: influence of the damage model. 1-gen-2003 M. Bianconi ; E. Albertazzi; S. Balboni; G. Lulli.
Computer simulation of ion channeling in Si containing structurally relaxed point defects 1-gen-2003 Lulli G.; Albertazzi E.; Bianconi M.; Balboni S.
Ion-channeling analysis of As relocation in heavily doped Si: As irradiated with high-energy ions 1-gen-2003 Lulli, G; Albertazzi, E; Bianconi, M; Ferri, M