Silicon on insulator (SOI) substrates, uniformly n doped with As or P at different concentrations in the range between 1.9 and 8 X 10(20) cm(-3), have been irradiated with increasing doses of high energy (2 MeV) Si+ ions. The effects of irradiation and the subsequent recovery have been followed by electrical conductivity and carrier mobility measurements and transmission electron microscopy observations. Isothermal annealings have been performed at temperatures in the range 600-800 degreesC. It was found that recovery takes place in two distinct stages which have been evidenced by using rapid thermal annealing and furnace heating. Our results show a very similar behavior for the two donors and indicate that electron trapping is the responsible of the reduction of the carrier density upon irradiation both in As and P doped samples.
Damage and recovery in doped SOI layers after high energy implantation
Solmi S;Armigliato A;Bianconi M;Lulli G;
2004
Abstract
Silicon on insulator (SOI) substrates, uniformly n doped with As or P at different concentrations in the range between 1.9 and 8 X 10(20) cm(-3), have been irradiated with increasing doses of high energy (2 MeV) Si+ ions. The effects of irradiation and the subsequent recovery have been followed by electrical conductivity and carrier mobility measurements and transmission electron microscopy observations. Isothermal annealings have been performed at temperatures in the range 600-800 degreesC. It was found that recovery takes place in two distinct stages which have been evidenced by using rapid thermal annealing and furnace heating. Our results show a very similar behavior for the two donors and indicate that electron trapping is the responsible of the reduction of the carrier density upon irradiation both in As and P doped samples.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
